Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface

This paper concerns research on magnesium oxide layers in terms of their potential use as a gate material for SiC MOSFET structures. The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh vacuum (UHV). In both cases, the MgO layers were obtained by a reactive evaporation method. Graphite layers terminating the SiC(0001) surface were formed by thermal annealing in UHV. The physicochemical properties of the deposited MgO layers and the systems formed with their participation were determined using X-ray and UV photoelectron spectroscopy (XPS, UPS). The results confirmed the formation of MgO compounds. Energy level diagrams were constructed for both systems. The valence band maximum of MgO layers was embedded deeper on the graphitized surface than on the SiC(0001).

XPS, AES AND UPS INVESTIGATION OF SnO2/Si AND DFT-BASED THEORETICAL STUDY WITHIN THE mBJ-GGA SCHEME

We investigate the growth performance of tin oxide on the Si substrate, achieved by spray pyrolysis using the sensitive analysis techniques X-Ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). These complementary techniques confirm the growth of homogeneous SnO2 thin films. We also study the electronic distribution of the valence band of SnO2 theoretically using density functional theory (DFT). The chemical and physical properties of the material depend on the electron structure varying as a function of energy. The density of states (DOS) is calculated using the modified Becke–Johnson-Generalized Gradient Approximation (mBJ-GGA) in order to identify the electronic orbitals and the importance of their contribution to the electronic structure of the valence band. Furthermore, we use the experimental technique UV Photoelectron Spectroscopy (UPS) for studying the electronic distribution within the valence band and for validating the theoretical results of the density of states of SnO2/Si.

UV-photoelectron spectroscopy of stable radicals: the electronic structure of planar Blatter radicals as materials for organic electronics

The electronic structure of a series of C(10)-substituted planar Blatter radical derivatives containing H, F, Cl, Br, CN, CF3 and OMe groups was investigated by gas phase UV-PES and results were correlated with solution electrochemical data.

Binding energy of solvated electrons and retrieval of true UV photoelectron spectra of liquids

The electronic energy and dynamics of solvated electrons, the simplest yet elusive chemical species, is of interest in chemistry, physics, and biology. Here, we present the electron binding energy distributions of solvated electrons in liquid water, methanol, and ethanol accurately measured using extreme ultraviolet (EUV) photoelectron spectroscopy of liquids with a single-order high harmonic. The distributions are Gaussian in all cases. Using the EUV and UV photoelectron spectra of solvated electrons, we succeeded in retrieving sharp electron kinetic energy distributions from the spectra broadened and energy shifted by inelastic scattering in liquids, overcoming an obstacle in ultrafast UV photoelectron spectroscopy of liquids. The method is demonstrated for the benchmark systems of charge transfer to solvent reaction and ultrafast internal conversion of hydrated electron from the first excited state.