High-performance III–VI monolayer transistors for flexible devices
2020 ◽
Vol 22
(13)
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pp. 7039-7047
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Keyword(s):
The mechanical properties of group III–VI monolayers and sub-10 nm scale device performance of corresponding MOSFETs have been investigated by using density functional theory calculations as well as ab initio quantum transport simulations.
2016 ◽
Vol 55
(11)
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pp. 5445-5452
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2018 ◽
Vol 41
◽
pp. 337-349
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2009 ◽
Vol 24
(10)
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pp. 3165-3173
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2012 ◽
Vol 137
(24)
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pp. 244104
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2019 ◽
Vol 116
◽
pp. 87-94
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2015 ◽
Vol 17
(25)
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pp. 16351-16358
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2019 ◽
Vol 29
(3)
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pp. 247-255
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