On the origin of the electron accumulation layer at clean InAs(111) surfaces
We address the electronic properties of bulk InAs and clean InAs(111) surfaces using DFT+U method. On the basis of optimized atomic surfaces we recover STM images and propose a possible explanation for the electron accumulation layer generation.
2008 ◽
Vol 8
(1)
◽
pp. 222-227
◽
2004 ◽
Vol 13
(11-12)
◽
pp. 2031-2036
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