Study of the impact of interface traps associated with SiNX passivation on AlGaN/GaN MIS-HEMTs

In this work, we show that a bilayer SiNx passivation scheme which includes a high-temperature annealed SiNx as gate dielectric, significantly improves both ON and OFF state performance of AlGaN/GaN MISHEMTs. From devices with different SiNx passivation schemes, surface and bulk leakage paths were determined. Temperature-dependent MESA leakage studies showed that the surface conduction could be explained using a 2-D variable range hopping mechanism along with the mid-gap interface states at the GaN(cap)/ SiNx interface generated due to the Ga-Ga metal like bonding states. It was found that the high temperature annealed SiNx gate dielectric exhibited the lowest interface state density and a two-step C-V indicative of a superior quality SiNx/GaN interface as confirmed from conductance and capacitance measurements. High-temperature annealing helps in the formation of Ga-N bonding states, thus reducing the shallow metal-like interface states. MISHEMT measurements showed a significant reduction in gate leakage and a 4-orders of magnitude improvement in the ON/OFF ratio while increasing the saturation drain current (IDS) by a factor of 2. Besides, MISHEMTs with 2-step SiNx passivation exhibited a relatively flat transconductance profile, indicative of lower interface states density. The dynamic Ron with gate and drain stressing measurements also showed about 3x improvements in devices with bilayer SiNx passivation.

Improved water saturation estimation in shaly sandstone through variable cementation factor

Estimation of water saturation, Sw, in shaly sandstone is an intricate process. The surface conduction of clay minerals adds up to the electrolyte conduction in the pore spaces, thus generating high formation conductivity that overshadows the hydrocarbon effect. In each resistivity-based water saturation model, the key parameter is formation factor, F, which is typically derived from Archie’s Law. Referring to a log–log plot between formation factor and porosity, cementation factor reflects the slope of the straight line abiding Archie’s Law. In the case of shaly sandstone, derivation based on Archie’s Law in combination with Waxman–Smits equation leads to higher cementation factor, m*. In the shaly parts of the reservoir, high m* is counterbalanced by clay conductivity. Nonetheless, high m* used in clean parts increases Sw estimation. In this study, the variable cementation factor equation is introduced into the standard correlation of Sw versus Resistivity Index, RI, to develop a water saturation model with shaly sandstone parameters. Data retrieved from two fields that yielded mean arctangent absolute percentage error (MAAPE) were analysed to determine the difference between calculated and measured data within the 0.01–0.15 range for variable cementation factor method. The conventional method yielded maximum MAAPE at 0.46.

Tendencies in ABO3 Perovskite and SrF2, BaF2 and CaF2 Bulk and Surface F-Center Ab Initio Computations at High Symmetry Cubic Structure

We computed the atomic shift sizes of the closest adjacent atoms adjoining the (001) surface F-center at ABO3 perovskites. They are significantly larger than the atomic shift sizes of the closest adjacent atoms adjoining the bulk F-center. In the ABO3 perovskite matrixes, the electron charge is significantly stronger confined in the interior of the bulk oxygen vacancy than in the interior of the (001) surface oxygen vacancy. The formation energy of the oxygen vacancy on the (001) surface is smaller than in the bulk. This microscopic energy distinction stimulates the oxygen vacancy segregation from the perovskite bulk to their (001) surfaces. The (001) surface F-center created defect level is nearer to the (001) surface conduction band (CB) bottom as the bulk F-center created defect level. On the contrary, the SrF2, BaF2 and CaF2 bulk and surface F-center charge is almost perfectly confined to the interior of the fluorine vacancy. The shift sizes of atoms adjoining the bulk and surface F-centers in SrF2, CaF2 and BaF2 matrixes are microscopic as compared to the case of ABO3 perovskites.

Two-dimensionality of metallic surface conduction in Co3Sn2S2 thin films

Two-dimensional (2D) surface of the topological materials is an attractive channel for the electrical conduction reflecting the linearly-dispersive electronic bands. Thickness-dependent sheet conductance measurement is a reliable method to evaluate the 2D and three-dimensional (3D) electrical conducting channel separately but has rarely been applied for Weyl semimetals. By applying this method to thin films of a Weyl semimetal Co3Sn2S2, here we show that the 2D conducting channel clearly emerges under the ferromagnetic phase, indicating a formation of the Fermi arcs projected from Weyl nodes. Comparison between 3D conductivity and 2D conductance provides the effective thickness of the surface conducting region being estimated to be approximately 20 nm, which would reflect the Weyl feature of electronic bands of the Co3Sn2S2. The emergent surface conduction will provide a pathway to activate quantum and spintronic transport features stemming from a Weyl node in thin-film-based devices.

Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V–S Process

Pristine, and In-, Sn-, and (In, Sn)-doped Bi2Se3 nanoplatelets synthesized on Al2O3(100) substrate by a vapor–solid mechanism in thermal CVD process via at 600 °C under 2 × 10−2 Torr. XRD and HRTEM reveal that In or Sn dopants had no effect on the crystal structure of the synthesized rhombohedral-Bi2Se3. FPA–FTIR reveals that the optical bandgap of doped Bi2Se3 was 26.3%, 34.1%, and 43.7% lower than pristine Bi2Se3. XRD, FESEM–EDS, Raman spectroscopy, and XPS confirm defects (In3+Bi3+), (In3+V0), (Sn4+Bi3+), (V0Bi3+), and (Sn2+Bi3+). Photocurrent that was generated in (In,Sn)-doped Bi2Se3 under UV(8 W) and red (5 W) light revealed stable photocurrents of 5.20 × 10−10 and 0.35 × 10−10 A and high Iphoto/Idark ratios of 30.7 and 52.2. The rise and fall times of the photocurrent under UV light were 4.1 × 10−2 and 6.6 × 10−2 s. Under UV light, (In,Sn)-dopedBi2Se3 had 15.3% longer photocurrent decay time and 22.6% shorter rise time than pristine Bi2Se3, indicating that (In,Sn)-doped Bi2Se3 exhibited good surface conduction and greater photosensitivity. These results suggest that In, Sn, or both dopants enhance photodetection of pristine Bi2Se3 under UV and red light. The findings also suggest that type of defect is a more important factor than optical bandgap in determining photo-detection sensitivity. (In,Sn)-doped Bi2Se3 has greater potential than undoped Bi2Se3 for use in UV and red-light photodetectors.

Particle Characteristics’ Influence on FLASH Sintering of Potassium Sodium Niobate: A Relationship with Conduction Mechanisms

The considerable decrease in temperature and time makes FLASH sintering a more sustainable alternative for materials processing. FLASH also becomes relevant if volatile elements are part of the material to be processed, as in alkali-based piezoelectrics like the promising lead-free K0.5Na0.5NbO3 (KNN). Due to the volatile nature of K and Na, KNN is difficult to process by conventional sintering. Although some studies have been undertaken, much remains to be understood to properly engineer the FLASH sintering process of KNN. In this work, the effect of FLASH temperature, TF, is studied as a function of the particle size and impurity content of KNN powders. Differences are demonstrated: while the particle size and impurity degree markedly influence TF, they do not significantly affect the densification and grain growth processes. The conductivity of KNN FLASH-sintered ceramics and KNN single crystals (SCs) is compared to elucidate the role of particles’ surface conduction. When particles’ surfaces are not present, as in the case of SCs, the FLASH process requires higher temperatures and conductivity values. These results have implications in understanding FLASH sintering towards a more sustainable processing of lead-free piezoelectrics.

Critical thickness for the emergence of Weyl features in Co3Sn2S2 thin films

Magnetic Weyl semimetals are quantum phases of matter arising from the interplay of linearly dispersive bands, spin-orbit coupling, and time reversal symmetry breaking. This can be realised, for example, in Co3Sn2S2, based on a cobalt kagome lattice and characterised by intriguing phenomena such as large anomalous Hall effect, Nernst effect, and water oxidation. Here, we attempt to determine the robustness of the twofold necessary conditions for the emergence of the magnetic Weyl semimetal phase in Co3Sn2S2 ultrathin films. Except for two-dimensional layered materials, a reduction of thickness generally makes it difficult to develop topological character and ferromagnetic long-range order. In Co3Sn2S2 films, while ferromagnetic ordering appears robustly even in average thicknesses of one or two unit cells with island-like polycrystalline domains, the anomalous Hall conductivity appears only above a critical thickness of approximately 10 nm. The emergence of surface conduction and large anomalous Hall effect implies the distinct contribution of Weyl nodes and their Berry curvature. These findings reveal an exotic feature of Weyl physics in thin-film based superstructures as well as a potential for future applications in electronic devices.

Large Bandgap Topological Insulator in Oxide APoO3 (A = Be, Mg, Ca, Sr, Ba, and Ra) Perovskite: An Ab Initio Study

Under the density functional theory framework, we have calculated the electronic and elastic properties of APoO3 (A = Be, Mg, Ca, Sr, Ba, and Ra) cubic perovskites. We found that CaPoO3, SrPoO3, BaPoO3, and RaPoO3 are topological insulators (TIs) with very large bandgaps of 0.861, 0.871, 0.820, and 0.810 eV, respectively. The nontrivial band topology together with the Z2 topological number of APoO3 perovskite are investigated. We also theoretically determine the three independent elastic constants C11, C12, and C44 of the APoO3 perovskite. The bulk modulus, shear modulus, Young’s modulus, Poisson’s ratio, and anisotropy factor are also calculated from the obtained elastic constants. We found that the Debye temperature for the APoO3 perovskite is around 330-370 K. In the bulk APoO3 perovskite, if the center Po atom is shifted 0.09Å away from the center, the induced electric polarization is quite large, being around 0.02 C/m2. In the surface band calculation, we found that both AO and PoO2 surfaces give rise to contributions to the conduction channel. If the Po atom moves both in-plane and out-of-plane, we show that both electric polarization and topologically protect surface conduction states exist in APoO3 perovskite, indicating that these oxide APoO3 perovskites are ferroelectric TIs and might be useful for spintronic applications.