scholarly journals Photo-energy Conversion Efficiency of CH3NH3PbI3/C60 Heterojunction Perovskite Solar Cells from First-principles

2021 ◽  
Author(s):  
Khian-Hooi Chew ◽  
Riichi Kuwahara ◽  
Kaoru Ohno
Keyword(s):  
Solar Cells ◽  
Energy Conversion ◽  
Conversion Efficiency ◽  
First Principles ◽  
Perovskite Solar Cells ◽  
Energy Conversion Efficiency ◽  
Potential Candidate ◽  
Next Generation ◽  
First Principles Study ◽  
Halide Perovskites

Halide perovskites have emerged as the most potential candidate for the next-generation solar cells. In this work, we conduct a comprehensive first-principles study on the photo-energy conversion efficiency (PCE) of...

First-principles study on the electronic and optical properties of the orthorhombic CsPbBr3 and CsPbI3 with Cmcm space group

2021 ◽  
Author(s):  
Xianhao Zhao ◽  
Tianyu Tang ◽  
Quan Xie ◽  
like gao ◽  
Limin Lu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Energy Conversion ◽  
Conversion Efficiency ◽  
First Principles ◽  
Energy Conversion Efficiency ◽  
Space Group ◽  
Absorbing Materials ◽  
Halide Perovskites ◽  
Lead Halide

The cesium lead halide perovskites are regarded as effective candidates for light-absorbing materials in solar cells, which have shown excellent performances in experiments such as promising energy conversion efficiency. In...

scholarly journals Two-step photon up-conversion solar cells

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Shigeo Asahi ◽  
Haruyuki Teranishi ◽  
Kazuki Kusaki ◽  
Toshiyuki Kaizu ◽  
Takashi Kita
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Energy Conversion ◽  
Conversion Efficiency ◽  
High Efficiency ◽  
Transmission Loss ◽  
Energy Conversion Efficiency ◽  
High Potential ◽  
Next Generation ◽  
Inas Quantum Dots

Abstract Reducing the transmission loss for below-gap photons is a straightforward way to break the limit of the energy-conversion efficiency of solar cells (SCs). The up-conversion of below-gap photons is very promising for generating additional photocurrent. Here we propose a two-step photon up-conversion SC with a hetero-interface comprising different bandgaps of Al0.3Ga0.7As and GaAs. The below-gap photons for Al0.3Ga0.7As excite GaAs and generate electrons at the hetero-interface. The accumulated electrons at the hetero-interface are pumped upwards into the Al0.3Ga0.7As barrier by below-gap photons for GaAs. Efficient two-step photon up-conversion is achieved by introducing InAs quantum dots at the hetero-interface. We observe not only a dramatic increase in the additional photocurrent, which exceeds the reported values by approximately two orders of magnitude, but also an increase in the photovoltage. These results suggest that the two-step photon up-conversion SC has a high potential for implementation in the next-generation high-efficiency SCs.

TiO2 cement for high-performance dye-sensitized solar cells

RSC Advances ◽  
2016 ◽  
Vol 6 (87) ◽  
pp. 83802-83807 ◽  
Author(s):  
Yu Hou ◽  
Shuang Yang ◽  
Chunzhong Li ◽  
Huijun Zhao ◽  
Hua Gui Yang
Keyword(s):  
Solar Cells ◽  
Energy Conversion ◽  
Conversion Efficiency ◽  
High Performance ◽  
Dye Sensitized Solar Cells ◽  
Energy Conversion Efficiency ◽  
Dye Sensitized ◽  
Degussa P25 ◽  
Sensitized Solar Cells

An energy conversion efficiency of 8.31% is reached by using a cemented photoanode for dye-sensitized solar cells, attaining a 31.1% improvement over the standard Degussa P25 sample.

Enhancing the energy conversion efficiency of low mobility solar cells by a 3D device architecture

2019 ◽  
Vol 7 (33) ◽  
pp. 10289-10296 ◽  
Author(s):  
Wayesh Qarony ◽  
Mohammad I. Hossain ◽  
Asman Tamang ◽  
Vladislav Jovanov ◽  
Alberto Salleo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Energy Conversion ◽  
Amorphous Silicon ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Energy Conversion Efficiency ◽  
Semiconductor Materials ◽  
Device Architecture

The short circuit current and energy conversion efficiency of solar cells based on semiconductor materials with low diffusion lengths like organics and amorphous silicon can be increased by a 3D device architecture.

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