Resonance-driven dynamically bipolar organic semiconductors for high-performance optoelectronic applications
Keyword(s):
Resonance-driven dynamically bipolar organic semiconductors were designed by using N–C=O resonance variation to transform one carbazole into an electron acceptor in the D-r-D structure. The blue OLEDs hosted by D-r-D materials showed a maximum EQE up to 31.2%.