scholarly journals Light fostered supercapacitor performance of multi-layered ReS2 grown on conducting substrates

2021 ◽  
Author(s):  
Nitika Arya ◽  
Piyush Kumar Avasthi ◽  
Viswanath Balakrishnan
Keyword(s):  
Energy Storage ◽  
Transition Metal ◽  
Band Gap ◽  
Transition Metal Dichalcogenides ◽  
Direct Band Gap ◽  
Metal Dichalcogenides ◽  
Direct Band ◽  
Supercapacitor Performance ◽  
Energy Storage Applications

Light fostered supercapacitor performance introduces a new realm in the field of smart energy storage applications. Transition metal dichalcogenides (TMDC) with direct band gap are intriguing candidates for developing light...

scholarly journals Strong Photoluminescence Enhancement from Bilayer Molybdenum Disulfide via the Combination of UV Irradiation and Superacid Molecular Treatment

2021 ◽  
Vol 11 (8) ◽  
pp. 3530
Author(s):  
Yuki Yamada ◽  
Takeshi Yoshimura ◽  
Atsushi Ashida ◽  
Norifumi Fujimura ◽  
Daisuke Kiriya
Keyword(s):  
Band Gap ◽  
Uv Irradiation ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Direct Band Gap ◽  
Metal Dichalcogenides ◽  
Direct Band ◽  
Pl Intensity ◽  
Optical Applications ◽  
Indirect Band Gap

A direct band gap nature in semiconducting materials makes them useful for optical devices due to the strong absorption of photons and their luminescence properties. Monolayer transition metal dichalcogenides (TMDCs) have received significant attention as direct band gap semiconductors and a platform for optical applications and physics. However, bilayer or thicker layered samples exhibit an indirect band gap. Here, we propose a method that converts the indirect band gap nature of bilayer MoS2, one of the representative TMDCs, to a direct band gap nature and enhances the photoluminescence (PL) intensity of bilayer MoS2 dramatically. The procedure combines UV irradiation with superacid molecular treatment on bilayer MoS2. UV irradiation induces the conversion of the PL property with an indirect band gap to a direct band gap situation in bilayer MoS2 when the interaction between the top and bottom layers is weakened by a sort of misalignment between them. Furthermore, the additional post-superacid treatment dramatically enhances the PL intensity of bilayer MoS2 by a factor of 700×. However, this procedure is not effective for a conventional bilayer sample, which shows no PL enhancement. From these results, the separated top layer would show a strong PL from the superacid treatment. The monolayer-like top layer is physically separated from the substrate by the intermediate bottom MoS2 layer, and this situation would be preferable for achieving a strong PL intensity. This finding will be useful for controlling the optoelectronic properties of thick TMDCs and the demonstration of high-performance optoelectronic devices.

Phase‐Dependent Band Gap Engineering in Alloys of Metal‐Semiconductor Transition Metal Dichalcogenides

2020 ◽  
Vol 30 (51) ◽  
pp. 2004912
Author(s):  
Shuxi Wang ◽  
John Cavin ◽  
Zahra Hemmat ◽  
Khagesh Kumar ◽  
Alexander Ruckel ◽  
...  
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
Transition Metal Dichalcogenides ◽  
Band Gap Engineering ◽  
Metal Dichalcogenides

scholarly journals Phase Restructuring in Transition Metal Dichalcogenides for Highly Stable Energy Storage

ACS Nano ◽  
2016 ◽  
Vol 10 (10) ◽  
pp. 9208-9215 ◽  
Author(s):  
Kai Leng ◽  
Zhongxin Chen ◽  
Xiaoxu Zhao ◽  
Wei Tang ◽  
Bingbing Tian ◽  
...  
Keyword(s):  
Energy Storage ◽  
Transition Metal ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides

Synthetic Engineering of Morphology and Electronic Band Gap in Lateral Heterostructures of Monolayer Transition Metal Dichalcogenides

ACS Nano ◽  
2020 ◽  
Vol 14 (5) ◽  
pp. 6323-6330 ◽  
Author(s):  
Hossein Taghinejad ◽  
Mohammad Taghinejad ◽  
Ali A. Eftekhar ◽  
Zhipeng Li ◽  
Matthew P. West ◽  
...  
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
Transition Metal Dichalcogenides ◽  
Electronic Band ◽  
Metal Dichalcogenides ◽  
Electronic Band Gap
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