Synthetic Engineering of Morphology and Electronic Band Gap in Lateral Heterostructures of Monolayer Transition Metal Dichalcogenides

ACS Nano ◽  
2020 ◽  
Vol 14 (5) ◽  
pp. 6323-6330 ◽  
Author(s):  
Hossein Taghinejad ◽  
Mohammad Taghinejad ◽  
Ali A. Eftekhar ◽  
Zhipeng Li ◽  
Matthew P. West ◽  
...  
2020 ◽  
Vol 30 (51) ◽  
pp. 2004912
Author(s):  
Shuxi Wang ◽  
John Cavin ◽  
Zahra Hemmat ◽  
Khagesh Kumar ◽  
Alexander Ruckel ◽  
...  

2015 ◽  
Vol 112 (15) ◽  
pp. 4523-4530 ◽  
Author(s):  
Xi Ling ◽  
Han Wang ◽  
Shengxi Huang ◽  
Fengnian Xia ◽  
Mildred S. Dresselhaus

One hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered from the perspective of a 2D layered material, attracting tremendous interest from condensed matter physicists, chemists, semiconductor device engineers, and material scientists. Similar to graphite and transition metal dichalcogenides (TMDs), black P has a layered structure but with a unique puckered single-layer geometry. Because the direct electronic band gap of thin film black P can be varied from 0.3 eV to around 2 eV, depending on its film thickness, and because of its high carrier mobility and anisotropic in-plane properties, black P is promising for novel applications in nanoelectronics and nanophotonics different from graphene and TMDs. Black P as a nanomaterial has already attracted much attention from researchers within the past year. Here, we offer our opinions on this emerging material with the goal of motivating and inspiring fellow researchers in the 2D materials community and the broad readership of PNAS to discuss and contribute to this exciting new field. We also give our perspectives on future 2D and thin film black P research directions, aiming to assist researchers coming from a variety of disciplines who are desirous of working in this exciting research field.


Nanoscale ◽  
2021 ◽  
Author(s):  
Pu Tan ◽  
Kaixuan Ding ◽  
Xiumei Zhang ◽  
Zhenhua Ni ◽  
Kostya Ostrikov ◽  
...  

Because of suitable band gap and high mobility, two-dimensional transition metal dichalcogenides (TMDs) materials are promising in future microelectronic devices. However, controllable p-type and n-type doping of TMDs is still...


Nano Letters ◽  
2017 ◽  
Vol 17 (3) ◽  
pp. 1610-1615 ◽  
Author(s):  
Mingu Kang ◽  
Beomyoung Kim ◽  
Sae Hee Ryu ◽  
Sung Won Jung ◽  
Jimin Kim ◽  
...  

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