Synthetic Engineering of Morphology and Electronic Band Gap in Lateral Heterostructures of Monolayer Transition Metal Dichalcogenides

ACS Nano ◽  
2020 ◽  
Vol 14 (5) ◽  
pp. 6323-6330 ◽  
Author(s):  
Hossein Taghinejad ◽  
Mohammad Taghinejad ◽  
Ali A. Eftekhar ◽  
Zhipeng Li ◽  
Matthew P. West ◽  
...  
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
Transition Metal Dichalcogenides ◽  
Electronic Band ◽  
Metal Dichalcogenides ◽  
Electronic Band Gap

Phase‐Dependent Band Gap Engineering in Alloys of Metal‐Semiconductor Transition Metal Dichalcogenides

2020 ◽  
Vol 30 (51) ◽  
pp. 2004912
Author(s):  
Shuxi Wang ◽  
John Cavin ◽  
Zahra Hemmat ◽  
Khagesh Kumar ◽  
Alexander Ruckel ◽  
...  
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
Transition Metal Dichalcogenides ◽  
Band Gap Engineering ◽  
Metal Dichalcogenides

scholarly journals The renaissance of black phosphorus

2015 ◽  
Vol 112 (15) ◽  
pp. 4523-4530 ◽  
Author(s):  
Xi Ling ◽  
Han Wang ◽  
Shengxi Huang ◽  
Fengnian Xia ◽  
Mildred S. Dresselhaus
Keyword(s):  
Thin Film ◽  
Semiconductor Device ◽  
Transition Metal Dichalcogenides ◽  
Single Layer ◽  
Research Field ◽  
Black Phosphorus ◽  
Electronic Band ◽  
Metal Dichalcogenides ◽  
Electronic Band Gap ◽  
Novel Applications

One hundred years after its first successful synthesis in the bulk form in 1914, black phosphorus (black P) was recently rediscovered from the perspective of a 2D layered material, attracting tremendous interest from condensed matter physicists, chemists, semiconductor device engineers, and material scientists. Similar to graphite and transition metal dichalcogenides (TMDs), black P has a layered structure but with a unique puckered single-layer geometry. Because the direct electronic band gap of thin film black P can be varied from 0.3 eV to around 2 eV, depending on its film thickness, and because of its high carrier mobility and anisotropic in-plane properties, black P is promising for novel applications in nanoelectronics and nanophotonics different from graphene and TMDs. Black P as a nanomaterial has already attracted much attention from researchers within the past year. Here, we offer our opinions on this emerging material with the goal of motivating and inspiring fellow researchers in the 2D materials community and the broad readership of PNAS to discuss and contribute to this exciting new field. We also give our perspectives on future 2D and thin film black P research directions, aiming to assist researchers coming from a variety of disciplines who are desirous of working in this exciting research field.

Bidirectional doping of two-dimensional thin-layer transition metal dichalcogenides by soft ammonia plasma

Nanoscale ◽  
2021 ◽  
Author(s):  
Pu Tan ◽  
Kaixuan Ding ◽  
Xiumei Zhang ◽  
Zhenhua Ni ◽  
Kostya Ostrikov ◽  
...  
Keyword(s):  
Transition Metal ◽  
Thin Layer ◽  
Band Gap ◽  
Transition Metal Dichalcogenides ◽  
High Mobility ◽  
Two Dimensional ◽  
Layer Transition ◽  
Microelectronic Devices ◽  
Metal Dichalcogenides ◽  
P Type

Because of suitable band gap and high mobility, two-dimensional transition metal dichalcogenides (TMDs) materials are promising in future microelectronic devices. However, controllable p-type and n-type doping of TMDs is still...

scholarly journals Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides

Nano Letters ◽  
2017 ◽  
Vol 17 (3) ◽  
pp. 1610-1615 ◽  
Author(s):  
Mingu Kang ◽  
Beomyoung Kim ◽  
Sae Hee Ryu ◽  
Sung Won Jung ◽  
Jimin Kim ◽  
...  
Keyword(s):  
Transition Metal ◽  
Band Gap ◽  
Transition Metal Dichalcogenides ◽  
Band Gap Engineering ◽  
Metal Dichalcogenides ◽  
Universal Mechanism
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