scholarly journals Significant Enhancement in Quantum-dot Light Emitting Device Stability via a ZnO:Polyethylenimine Mixture in the Electron Transport Layer

2021 ◽  
Author(s):  
Dong Seob Chung ◽  
Tyler Davidson-Hall ◽  
Hyeoghwa Yu ◽  
Fatemeh Samaeifar ◽  
Peter Chun ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Transport Layer ◽  
Significant Enhancement ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Device Stability

The effect of adding polyethylenimine (PEI) into the ZnO electron transport layer (ETL) of inverted quantum dot (QD) light emitting devices (QDLEDs) to form a blended ZnO:PEI ETL instead of...

scholarly journals Correction: Optimization of the electron transport layer in quantum dot light-emitting devices

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Gary Zaiats ◽  
Shingo Ikeda ◽  
Prashant V. Kamat
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Light Emitting Devices

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

scholarly journals Optimization of the electron transport layer in quantum dot light-emitting devices

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Gary Zaiats ◽  
Shingo Ikeda ◽  
Prashant V. Kamat
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Charge Carrier ◽  
Hole Transport ◽  
Charge Carriers ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Mobility Of Charge Carriers

AbstractQuantum dot light-emitting devices have emerged as an important technology for display applications. Their emission is a result of recombination between positive and negative charge carriers that are transported through the hole and electron conductive layers, respectively. The selection of electron or hole transport materials in these devices not only demands the alignment of energy levels between the layers but also balances the flow of electrons and holes toward the recombination sites. In this work, we examine a method for device optimization through control of the charge carrier kinetics. We employ impedance spectroscopy to examine the mobility of charge carriers through each of the layers. The derived mobility values provide a path to estimate the transition time of each charge carrier toward the emitting layer. We suggest that an optimal device structure can be obtained when the transition times of both charge carriers toward the active layer are similar. Finally, we examine our hypothesis by focusing on thickness optimization of the electron transport layer.

All inorganic quantum dot light emitting devices with solution processed metal oxide transport layers

MRS Advances ◽  
2016 ◽  
Vol 1 (4) ◽  
pp. 305-310 ◽  
Author(s):  
R. Vasan ◽  
H. Salman ◽  
M. O. Manasreh
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
Light Emitting ◽  
Light Emitting Devices

ABSTRACTAll inorganic quantum dot light emitting devices with solution processed transport layers are investigated. The device consists of an anode, a hole transport layer, a quantum dot emissive layer, an electron transport layer and a cathode. Indium tin oxide coated glass slides are used as substrates with the indium tin oxide acting as the transparent anode electrode. The transport layers are both inorganic, which are relatively insensitive to moisture and other environmental factors as compared to their organic counterparts. Nickel oxide acts as the hole transport layer, while zinc oxide nanocrystals act as the electron transport layer. The nickel oxide hole transport layer is formed by annealing a spin coated layer of nickel hydroxide sol-gel. On top of the hole transport layer, CdSe/ZnS quantum dots synthesized by hot injection method is spin coated. Finally, zinc oxide nanocrystals, dispersed in methanol, are spin coated over the quantum dot emissive layer as the electron transport layer. The material characterization of different layers is performed by using absorbance, Raman scattering, XRD, and photoluminescence measurements. The completed device performance is evaluated by measuring the IV characteristics, electroluminescence and quantum efficiency measurements. The device turn on is around 4V with a maximum current density of ∼200 mA/cm2 at 9 V.

Improving Charge-Imbalanced Problem of Quantum Dot Light-Emitting Diodes with TPBi/ZnO Electron Transport Layer

2019 ◽  
Vol 19 (10) ◽  
pp. 6152-6157
Author(s):  
Sanghyun Lee ◽  
Junekyun Park ◽  
Jaewon Jeong ◽  
Jaehyun Kim ◽  
Juhyung Kim ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting

Boosting the performance of quantum dot light-emitting diodes with Mg and PVP Co-doped ZnO as electron transport layer

2019 ◽  
Vol 75 ◽  
pp. 105411 ◽  
Author(s):  
Rashed Alsharafi ◽  
Yangbin Zhu ◽  
Fushan Li ◽  
Zhongwei Xu ◽  
Hailong Hu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Light Emitting ◽  
Doped Zno ◽  
Co Doped

High luminance of CuInS2-based yellow quantum dot light emitting diodes fabricated by all-solution processing

RSC Advances ◽  
2016 ◽  
Vol 6 (76) ◽  
pp. 72462-72470 ◽  
Author(s):  
Jingling Li ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehui Xie ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Zno Nanoparticles ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Hole Transport Layer ◽  
High Luminance ◽  
Light Emitting

In this work, all-solution processed, multi-layer yellow QLEDs, consisting of a hole transport layer of poly(9-vinylcarbazole), emissive layer of ligand exchanged CuInS2/ZnS QDs, and electron transport layer of ZnO nanoparticles, are fabricated.

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