Nano-Magnetic Tunnel Junctions Controlled by Electric Field for Straintronics

Nanoscale ◽  
2021 ◽  
Author(s):  
Peisen Li ◽  
Xinping Yao ◽  
Yueguo Hu ◽  
Mengchun Pan ◽  
Minhui Ji ◽  
...  
Keyword(s):  
Energy Efficiency ◽  
Electric Field ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Junction ◽  
Magnetic Tunneling Junction ◽  
Magnetic Tunneling

The magnetic tunneling junction (MTJ) controlled by electric field as a candidate approach for energy efficiency is the highlight for the nonvolatile RAM, while there is still a lack of...

Magnetism of semiconductor-based magnetic tunnel junctions under electric field from first principles

2009 ◽  
Vol 94 (25) ◽  
pp. 252102 ◽  
Author(s):  
Erjun Kan ◽  
Hongjun Xiang ◽  
Jinlong Yang ◽  
Myung-Hwan Whangbo
Keyword(s):  
Electric Field ◽  
First Principles ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions

Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness

2011 ◽  
Vol 109 (7) ◽  
pp. 07C731 ◽  
Author(s):  
Lubna R. Shah ◽  
Nupur Bhargava ◽  
Sangcheol Kim ◽  
Ryan Stearrett ◽  
Xiaoming Kou ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Layer Thickness ◽  
Shape Anisotropy ◽  
Tunneling Junction ◽  
Free Layer ◽  
Magnetic Field Sensors ◽  
Magnetic Tunneling Junction ◽  
Magnetic Tunneling

Improved Etch Characteristics of Magnetic Tunneling Junction Materials by Using Helium

2017 ◽  
Vol 6 (9) ◽  
pp. N148-N154 ◽  
Author(s):  
Sungwoo Park ◽  
Kyungchae Yang ◽  
Hoseok Lee ◽  
Dongwoo Kim ◽  
Jongung Baek ◽  
...  
Keyword(s):  
Tunneling Junction ◽  
Magnetic Tunneling Junction ◽  
Magnetic Tunneling

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

2016 ◽  
Vol 108 (1) ◽  
pp. 012403 ◽  
Author(s):  
C. Grezes ◽  
F. Ebrahimi ◽  
J. G. Alzate ◽  
X. Cai ◽  
J. A. Katine ◽  
...  
Keyword(s):  
Electric Field ◽  
High Resistance ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Switching Energy ◽  
Area Product

Rashba Spin-Orbit Effect on Traversal Time in Parabolic-Well Magnetic Tunneling Junction

2014 ◽  
Vol 707 ◽  
pp. 338-342
Author(s):  
Zheng Huang
Keyword(s):  
Orbit Interaction ◽  
Tunneling Time ◽  
Tunnel Barrier ◽  
Spin Orbit ◽  
Tunneling Junction ◽  
Spin Orbit Interaction ◽  
Spin Tunneling ◽  
Rashba Spin ◽  
Magnetic Tunneling Junction ◽  
Magnetic Tunneling

Based on the phase time definition,we study theoretically the transmission coefficients and the spin-tunneling time in parabolic-well magnetic tunneling junction with a tunnel barrier in the presence of Rashba spin-orbit interaction. The significant quantum size, quantum coherence, and Rashba spin-orbit interaction are considered simultaneously. It is found that the tunneling time strongly depends on the spin orientation of tunneling electrons. We also find that as the length of the semiconductor increases, the spin tunneling time shows curved increase. It exhibits useful instructions for the design of spin electronic devices.

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