Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect

2017 ◽  
Vol 64 (12) ◽  
pp. 4919-4927 ◽  
Author(s):  
Lang Zeng ◽  
Tianqi Gao ◽  
Deming Zhang ◽  
Shouzhong Peng ◽  
Lezhi Wang ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Memory Cell ◽  
Negative Capacitance ◽  
Tunneling Junction ◽  
Anisotropy Effect ◽  
Magnetic Tunneling Junction ◽  
Magnetic Tunneling

Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness

2011 ◽  
Vol 109 (7) ◽  
pp. 07C731 ◽  
Author(s):  
Lubna R. Shah ◽  
Nupur Bhargava ◽  
Sangcheol Kim ◽  
Ryan Stearrett ◽  
Xiaoming Kou ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Layer Thickness ◽  
Shape Anisotropy ◽  
Tunneling Junction ◽  
Free Layer ◽  
Magnetic Field Sensors ◽  
Magnetic Tunneling Junction ◽  
Magnetic Tunneling

Improved Etch Characteristics of Magnetic Tunneling Junction Materials by Using Helium

2017 ◽  
Vol 6 (9) ◽  
pp. N148-N154 ◽  
Author(s):  
Sungwoo Park ◽  
Kyungchae Yang ◽  
Hoseok Lee ◽  
Dongwoo Kim ◽  
Jongung Baek ◽  
...  
Keyword(s):  
Tunneling Junction ◽  
Magnetic Tunneling Junction ◽  
Magnetic Tunneling

Rashba Spin-Orbit Effect on Traversal Time in Parabolic-Well Magnetic Tunneling Junction

2014 ◽  
Vol 707 ◽  
pp. 338-342
Author(s):  
Zheng Huang
Keyword(s):  
Orbit Interaction ◽  
Tunneling Time ◽  
Tunnel Barrier ◽  
Spin Orbit ◽  
Tunneling Junction ◽  
Spin Orbit Interaction ◽  
Spin Tunneling ◽  
Rashba Spin ◽  
Magnetic Tunneling Junction ◽  
Magnetic Tunneling

Based on the phase time definition,we study theoretically the transmission coefficients and the spin-tunneling time in parabolic-well magnetic tunneling junction with a tunnel barrier in the presence of Rashba spin-orbit interaction. The significant quantum size, quantum coherence, and Rashba spin-orbit interaction are considered simultaneously. It is found that the tunneling time strongly depends on the spin orientation of tunneling electrons. We also find that as the length of the semiconductor increases, the spin tunneling time shows curved increase. It exhibits useful instructions for the design of spin electronic devices.

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