A novel orange-yellow-emitting polymethyl methacrylate derivative grafted with cationic iridium(III) complex units was synthesized and used as down-conversion luminescent materials in light-emitting diodes (LEDs). The polymer had a thermal decomposition temperature (Td) of 275 °C. With the temperature increasing from 20 to 100 °C, its photoluminescent intensity decreased to 76.8% with thermal quenching activation energy (Ea) of 0.2775 eV. A series of LEDs was fabricated by 460 nm blue GaN chips and the polymer blended in silicone at different concentrations. At 4.0 wt %, a cold white LED was obtained, the correlated color temperature (CCT) was 10,050 K, color rendering index (CRI) was 71.2, luminous efficiency (ηL) was 5.3 lm·w−1, and Commission Internationale de L’Eclairage (CIE) chromaticity coordinates were (0.30, 0.24). At 5.0 wt.%, the LED emitted neutral white light, its CCT was 4938 K, CRI was 75, ηL was 13.8 lm·w−1, and the CIE value was (0.34, 0.27). At 5.5 wt %, 6.0 wt %, 7.0 wt %, and 8.0 wt %, the LEDs all emitted warm white light; their CCTs were 3446, 3093, 2557, and 2337 K, respectively; their CRIs were 73.6, 71.8, 63.8, and 59.0, respectively; their ηL were 18.1, 16.3, 14.8, and 13.7 lm·w−1, respectively; and their CIE values were (0.36, 0.30), (0.40, 0.35), (0.45, 0.38), and (0.50, 0.42), respectively. At 9.0 wt %, the blue light of GaN chip was completely absorbed by the polymer and only the orange-yellow light of the polymer emitted. The results suggested the polymer was a promising orange-yellow-emitting phosphor candidate for white LEDs, especially for warm white LEDs.
Luminescence and energy transfer of warm white-emitting phosphor Mg2Y2Al2Si2O12:Dy3+,Eu3+ for white LEDs
