Understanding ultrafast charge transfer processes in SnS and SnS2: using the core hole clock method to measure attosecond orbital-dependent electron delocalisation in semiconducting layered materials

Author(s):  
Freddy Oropeza ◽  
Mariam Barawi ◽  
Alfonso González Elena ◽  
Víctor Antonio Antonio de la Peña O'Shea ◽  
Juan Francisco Trigo ◽  
...  

SnS and SnS2 are earth abundant layered semiconductors that owing to their optoelectronic properties have been proposed as materials for different photovoltaic, photosensing and photocatalytic applications. The intrinsic efficiency of...

2017 ◽  
Vol 119 (26) ◽  
Author(s):  
D. Céolin ◽  
N. V. Kryzhevoi ◽  
Ch. Nicolas ◽  
W. Pokapanich ◽  
S. Choksakulporn ◽  
...  

2017 ◽  
Vol 19 (44) ◽  
pp. 29954-29962 ◽  
Author(s):  
Yunier Garcia-Basabe ◽  
Alexandre R. Rocha ◽  
Flávio C. Vicentin ◽  
Cesar E. P. Villegas ◽  
Regiane Nascimento ◽  
...  

Ultrafast electron delocalization pathways on the MoS2/graphene heterostructure were elucidated.


2016 ◽  
Vol 28 (9) ◽  
pp. 094006 ◽  
Author(s):  
Liang Cao ◽  
Ming Yang ◽  
Li Yuan ◽  
Nisachol Nerngchamnong ◽  
Yuan-Ping Feng ◽  
...  

2008 ◽  
Vol 63 (11) ◽  
pp. 465-486 ◽  
Author(s):  
Li Wang ◽  
Wei Chen ◽  
Andrew Thye Shen Wee

2007 ◽  
Vol 434 (4-6) ◽  
pp. 214-217 ◽  
Author(s):  
A. Föhlisch ◽  
S. Vijayalakshmi ◽  
F. Hennies ◽  
W. Wurth ◽  
V.R.R. Medicherla ◽  
...  
Keyword(s):  

2010 ◽  
Vol 82 (7) ◽  
Author(s):  
G. J. Dutton ◽  
W. Jin ◽  
J. E. Reutt-Robey ◽  
S. W. Robey

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