Tunable band gap of layered semiconductor Zn3In2S6 under pressure

Author(s):  
Resta A. Susilo ◽  
Yu Liu ◽  
Hongwei Sheng ◽  
Hongliang Dong ◽  
Raimundas Sereika ◽  
...  

Band gap is an important property of a semiconductor, and a candidate material with highly tunable band gap under external tuning parameters will offer wider applications in optoelectronic devices and...

RSC Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 1686-1692 ◽  
Author(s):  
Yang Zhang ◽  
Zhi-Feng Wu ◽  
Peng-Fei Gao ◽  
Dang-Qi Fang ◽  
Er-Hu Zhang ◽  
...  

The BC3monolayer holds great promise in the applications of nanoelectronic and optoelectronic devices due to its good structural stability, moderate and tunable band gap, and strain-controllable optical properties.


Proceedings ◽  
2018 ◽  
Vol 3 (1) ◽  
pp. 10 ◽  
Author(s):  
Onkar Mangla ◽  
Savita Roy

Zirconium oxide (ZrO2) is a wide and direct band gap semiconductor used for the fabrication of optoelectronic devices. ZrO2 based optoelectronic devices span a wide optical range depending on the band gap of ZrO2 material. The band gap of ZrO2 can be tuned by fabricating it to the nanoscale. In this paper, we synthesized the ZrO2 nanostructures on quartz substrate using ZrO2 ions produced by the ablation of ZrO2 pellet due to high temperature, high density, and extremely non-equilibrium argon plasma in a modified dense plasma focus device. Uniformly distributed monoclinic ZrO2 nanostructures with an average dimension of ~14 nm were obtained through X-ray diffraction and scanning electron microscopy studies. The monoclinic phase of ZrO2 nanostructures is further confirmed from photoluminescence (PL) and Raman spectra. PL spectra show peaks in ultra-violet (UV), near-UV, and visible regions with tunable band gap of nanostructures. A similar tunability of band gap was observed from absorption spectra. The obtained structural, morphological, and optical properties are compared to investigate the potential applications of ZrO2 nanostructures in optoelectronic devices.


Author(s):  
Maurizio Cossi ◽  
Alberto Fraccarollo ◽  
Leonardo Marchese
Keyword(s):  
Band Gap ◽  

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 419
Author(s):  
Saradh Prasad ◽  
Mamduh J. Aljaafreh ◽  
Mohamad S. AlSalhi ◽  
Abeer Alshammari

The notable photophysical characteristics of perovskite quantum dots (PQDs) (CsPbBr3) are suitable for optoelectronic devices. However, the performance of PQDs is unstable because of their surface defects. One way to address the instability is to passivate PQDs using different organic (polymers, oligomers, and dendrimers) or inorganic (ZnS, PbS) materials. In this study, we performed steady-state spectroscopic investigations to measure the photoluminescence (PL), absorption (A), transmission (T), and reflectance (R) of perovskite quantum dots (CsPbBr3) and ethylene vinyl acetate/terpene phenol (1%) (EVA-TPR (1%), or EVA) copolymer/perovskite composites in thin films with a thickness of 352 ± 5 nm. EVA is highly transparent because of its large band gap; furthermore, it is inexpensive and easy to process. However, the compatibility between PQDs and EVA should be established; therefore, a series of analyses was performed to compute parameters, such as the band gap, the coefficients of absorbance and extinction, the index of refractivity, and the dielectric constant (real and imaginary parts), from the data obtained from the above investigation. Finally, the optical conductivities of the films were studied. All these analyses showed that the EVA/PQDs were more efficient and stable both physically and optically. Hence, EVA/PQDs could become copolymer/perovskite active materials suitable for optoelectronic devices, such as solar cells and perovskite/polymer light-emitting diodes (PPLEDs).


2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Ruge Quhe ◽  
Jianhua Ma ◽  
Zesheng Zeng ◽  
Kechao Tang ◽  
Jiaxin Zheng ◽  
...  

2012 ◽  
Vol 65 ◽  
pp. 165-169 ◽  
Author(s):  
C.H. Hu ◽  
Y. Zhang ◽  
H.Y. Liu ◽  
S.Q. Wu ◽  
Y. Yang ◽  
...  

ChemSusChem ◽  
2008 ◽  
Vol 1 (12) ◽  
pp. 981-983 ◽  
Author(s):  
Jorge Gascon ◽  
María D. Hernández-Alonso ◽  
Ana Rita Almeida ◽  
Gerard P. M. van Klink ◽  
Freek Kapteijn ◽  
...  
Keyword(s):  
Band Gap ◽  

Nano Letters ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 3360-3366 ◽  
Author(s):  
D. Haberer ◽  
D. V. Vyalikh ◽  
S. Taioli ◽  
B. Dora ◽  
M. Farjam ◽  
...  

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