Highlighting the processing versatility of a silicon phthalocyanine derivative for organic thin-film transistors

Author(s):  
Rosemary Cranston ◽  
Benjamin King ◽  
Chloé Dindault ◽  
Trevor M. Grant ◽  
Nicole Rice ◽  
...  

Silicon phthalocyanine (SiPc) derivatives have recently emerged as promising materials for n-type organic thin-film transistors (OTFTs) with the ability to be fabricated either by solid state or solution processes through...

2012 ◽  
Vol 22 (36) ◽  
pp. 19179 ◽  
Author(s):  
Nandu B. Chaure ◽  
Chandana Pal ◽  
Seema Barard ◽  
Theo Kreouzis ◽  
Asim K. Ray ◽  
...  

2018 ◽  
Vol 20 (26) ◽  
pp. 17889-17898 ◽  
Author(s):  
Marta Reig ◽  
Gintautas Bagdziunas ◽  
Arunas Ramanavicius ◽  
Joaquim Puigdollers ◽  
Dolores Velasco

Role of the solid-state organization of the semiconductor and of its interface with the dielectric on the OTFT performance.


2019 ◽  
Vol 5 (8) ◽  
pp. 1900087 ◽  
Author(s):  
Owen A. Melville ◽  
Trevor M. Grant ◽  
Brendan Mirka ◽  
Nicholas T. Boileau ◽  
Jeongwon Park ◽  
...  

2019 ◽  
Vol 5 (8) ◽  
pp. 1970041
Author(s):  
Owen A. Melville ◽  
Trevor M. Grant ◽  
Brendan Mirka ◽  
Nicholas T. Boileau ◽  
Jeongwon Park ◽  
...  

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui

2013 ◽  
Vol E96.C (11) ◽  
pp. 1360-1366 ◽  
Author(s):  
Ichiro FUJIEDA ◽  
Tse Nga NG ◽  
Tomoya HOSHINO ◽  
Tomonori HANASAKI

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