scholarly journals Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors

2018 ◽  
Vol 20 (26) ◽  
pp. 17889-17898 ◽  
Author(s):  
Marta Reig ◽  
Gintautas Bagdziunas ◽  
Arunas Ramanavicius ◽  
Joaquim Puigdollers ◽  
Dolores Velasco

Role of the solid-state organization of the semiconductor and of its interface with the dielectric on the OTFT performance.

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.


2020 ◽  
Vol 12 (25) ◽  
pp. 28416-28425 ◽  
Author(s):  
Adara Babuji ◽  
Inés Temiño ◽  
Ana Pérez-Rodríguez ◽  
Olga Solomeshch ◽  
Nir Tessler ◽  
...  

2018 ◽  
Vol 83 (2) ◽  
pp. 20201 ◽  
Author(s):  
Yao Ni ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Hang Yu ◽  
Yanyun Li ◽  
...  

Organic thin film transistors (OTFTs) with silicon oxide (SiO2)/poly(4-vinylphenol) (PVP)/polymethylmethacrylate (PMMA) tri-layer structure (SPP) as dielectric layers have been fabricated. To verify the validity of such tri-layer structure, two different organic semiconductor materials such as p-type pentacene and n-type fluorinated copper phthalo–cyanine (F16CuPc) are both used for fabricating OTFTs. Comparing with the OTFTs even by using PMMA modification, the better interface quality existing between SPP dielectric and organic film leads a higher conductive efficiency for transport carriers in channel. And then the field effect carriers (hole in pentacene OTFTs and electron in F16CuPc OTFTs) mobilities are both increased obviously. Our results show the SPP dielectric structure can be widely used to improve performance of OTFTs.


2018 ◽  
Vol 6 (22) ◽  
pp. 6052-6057 ◽  
Author(s):  
Jiahui Tan ◽  
Jakob Sorensen ◽  
Huanli Dong ◽  
Wenping Hu

The present work demonstrates a new interface engineering strategy to improve pentacene transistors performance by using a fullerene-derivative interlayer.


2018 ◽  
Vol 20 (2) ◽  
pp. 1142-1149 ◽  
Author(s):  
Marta Reig ◽  
Joaquim Puigdollers ◽  
Dolores Velasco

n-Type OTFTs were fabricated and characterised from a series of tricyanovinyl-substituted carbazole-based materials with different N-alkyl chain lengths as active layers. XRD studies gave insights into the main intermolecular interactions, molecular packing motifs and the degree of molecular order in thin films that justified the performance of the devices.


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