scholarly journals Halide (X = I, Br, Cl) Doping to Tune the Electronic Structure for Conversion of Pb0.6Sn0.4Te into a High Performing Thermoelectric Material

2022 ◽  
Author(s):  
Sandhya U. Shenoy ◽  
Denthaje Krishna Bhat

Fabrication of thermoelectric (TE) device requires both p and n type legs with comparable performances. Pb0.6Sn0.4Te which belongs to the class of topological crystalline insulator (TCI) has a potential to...

2020 ◽  
Vol 4 (5) ◽  
pp. 2363-2369 ◽  
Author(s):  
Pushkar Mishra ◽  
Deobrat Singh ◽  
Yogesh Sonvane ◽  
Rajeev Ahuja

We have investigated the electronic structure, vibrational and transport properties of boron chalcogenide BX (X = S, Se, Te) materials, which may have potential applications in high-performance thermoelectric devices.


2000 ◽  
Vol 626 ◽  
Author(s):  
P. Larson ◽  
S.D. Mahanti ◽  
D-Y Chung ◽  
M.G. Kanatzidis

ABSTRACTRecently, CsBi4Te6 has been reported as a high-performance thermoelectric material for low temperature applications with a higher thermoelectric figure of merit (ZT ∼ 0.8 at 225 Kelvin) than conventional Bi2-xSbzTe3-ySey alloys at the same temperature. First-principle electronic structure calculations within density functional theory performed on this material give an indirect narrow-gap semiconductor. Dispersions of energy bands along different directions in k-space display large anisotropy and multiple conduction band minima close in energy, characteristics of a good thermoelectric material.


2021 ◽  
Author(s):  
Yukun Liu ◽  
Michael Toriyama ◽  
Zizhen Cai ◽  
Mengjia Zhao ◽  
Fei Liu ◽  
...  

Yb14MnSb11 and Yb14MgSb11 have rapidly risen to prominence as high-performing p-type thermoelectric materials for potential deep space power generation. However, the fairly complex crystal structure of 14-1-11 Zintl compounds renders the interpretation of the electronic band structure obscure, making it difficult to chemically guide band engineering and optimization efforts. In this work, we delineate the valence balanced Zintl chemistry of A14MX11 compounds (A = Yb, Ca; M = Mg, Mn, Al, Zn, Cd; X = Sb, Bi) using molecular orbital theory analysis. By analyzing the electronic band structures of Yb14MgSb11 and Yb14AlSb11 , we show that the conduction band minimum is composed of either an antibonding molecular orbital originating from the (Sb3)7− trimer, or a mix of atomic orbitals of A, M, and X. The singly degenerate valence band is comprised of non-bonding Sb p-z orbitals primarily from the Sb atoms in the (MSb4)m- tetrahedra and the of isolated Sb atoms distributed throughout the unit cell. Such a chemical understanding of the electronic structure enables strategies to engineer electronic properties (e.g., the band gap) of A14MX11 compounds.


2018 ◽  
Vol 98 (9) ◽  
Author(s):  
P. Wu ◽  
B. Zhang ◽  
K. L. Peng ◽  
M. Hagihala ◽  
Y. Ishikawa ◽  
...  

2008 ◽  
Vol 69 (9) ◽  
pp. 2274-2276 ◽  
Author(s):  
W. Luo ◽  
J. Souza de Almeida ◽  
J.M. Osorio-Guillen ◽  
R. Ahuja

2016 ◽  
Vol 108 (19) ◽  
pp. 193901 ◽  
Author(s):  
Subhajit Roychowdhury ◽  
U. Sandhya Shenoy ◽  
Umesh V. Waghmare ◽  
Kanishka Biswas

2017 ◽  
Vol 7 (4) ◽  
Author(s):  
Wencan Jin ◽  
Suresh Vishwanath ◽  
Jianpeng Liu ◽  
Lingyuan Kong ◽  
Rui Lou ◽  
...  

2021 ◽  
Vol 103 (24) ◽  
Author(s):  
D. Pei ◽  
Y.-Y. Lv ◽  
Y. Y. Y. Xia ◽  
Y. W. Li ◽  
J. Y. Liu ◽  
...  

2015 ◽  
Vol 127 (50) ◽  
pp. 15456-15460 ◽  
Author(s):  
Subhajit Roychowdhury ◽  
U. Sandhya Shenoy ◽  
Umesh V. Waghmare ◽  
Kanishka Biswas

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