High-power pulsed GaAs double-drift hybrid-read impatt diodes for X-band

1979 ◽  
Vol 15 (10) ◽  
pp. 277
Author(s):  
J.J. Berenz ◽  
J. Kinoshita ◽  
T.L. Hierl ◽  
F.B. Fank
Keyword(s):  
High Power ◽  
X Band ◽  
Impatt Diodes

Demonstration of High-Power X-Band Oscillation in p+/n-/n+ 4H-SiC IMPATT Diodes with Guard-Ring Termination

2005 ◽  
Vol 483-485 ◽  
pp. 981-984 ◽  
Author(s):  
Shuichi Ono ◽  
Manabu Arai ◽  
C. Kimura
Keyword(s):  
Ion Implantation ◽  
Output Power ◽  
High Power ◽  
Avalanche Breakdown ◽  
Guard Ring ◽  
Impatt Diode ◽  
Peak Output Power ◽  
X Band ◽  
Impatt Diodes

We fabricated a p+/n-/n+ 4H-SiC IMPATT diode with guard-ring termination. The p+ - layer and the guard-ring were formed by ion implantation. The diode showed abrupt avalanche breakdown characteristics and we obtained a peak output power of 1.8 W at 11.93 GHz, which is the highest peak output power ever for the SiC IMPATT diodes in X-band.

Design of TE01 Window for X-Band High Power Klystron

2011 ◽  
Vol 30 (2) ◽  
pp. 501-504
Author(s):  
Peng Sun ◽  
Yao-gen Ding ◽  
Ding Zhao
Keyword(s):  
High Power ◽  
X Band

High-power parallel-array IMPATT diodes

1971 ◽  
Vol 7 (11) ◽  
pp. 301-303 ◽  
Author(s):  
A.M. Cowley ◽  
R.C. Patterson
Keyword(s):  
High Power ◽  
Parallel Array ◽  
Impatt Diodes

scholarly journals Development and high-power testing of an X -band dielectric-loaded power extractor

2020 ◽  
Vol 23 (1) ◽  
Author(s):  
Jiahang Shao ◽  
Chunguang Jing ◽  
Eric Wisniewski ◽  
Gwanghui Ha ◽  
Manoel Conde ◽  
...  
Keyword(s):  
High Power ◽  
X Band ◽  
Power Testing

High power X-band fast ferroelectric switch

2010 ◽  
Author(s):  
Steven H. Gold ◽  
Sergey V. Shchelkunov ◽  
Vyacheslav P. Yakovlev ◽  
Jay L. Hirshfield
Keyword(s):  
High Power ◽  
X Band
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