Threshold current characteristics of GaAs lasers under short pulse excitation

1984 ◽  
Vol 20 (2) ◽  
pp. 63 ◽  
Author(s):  
N.A. Olsson ◽  
N.K. Dutta ◽  
W.T. Tsang ◽  
R.A. Logan
Keyword(s):  
Short Pulse ◽  
Threshold Current ◽  
Pulse Excitation ◽  
Current Characteristics

Temperature dependence of threshold current of injection lasers for short pulse excitation

1984 ◽  
Vol 44 (10) ◽  
pp. 943-944 ◽  
Author(s):  
N. K. Dutta ◽  
N. A. Olsson ◽  
J. P. Heritage ◽  
P. L. Liu
Keyword(s):  
Temperature Dependence ◽  
Short Pulse ◽  
Threshold Current ◽  
Pulse Excitation ◽  
Injection Lasers

Optical Study of Localized and Delocalized States in GaAsN/GaAs

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rapid Thermal Annealing ◽  
Short Pulse ◽  
Selective Excitation ◽  
Excitation Power ◽  
Pulse Excitation ◽  
Optical Study ◽  
Time Resolved ◽  
Exciton Localization ◽  
Time Resolved Photoluminescence

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

Short-pulse excitation of microwave plasma for efficient diamond growth

2016 ◽  
Vol 109 (9) ◽  
pp. 092102 ◽  
Author(s):  
Hideaki Yamada ◽  
Akiyoshi Chayahara ◽  
Yoshiaki Mokuno
Keyword(s):  
Microwave Plasma ◽  
Short Pulse ◽  
Diamond Growth ◽  
Pulse Excitation

Dynamic plastic instabilities in response to short-pulse excitation : effects of slenderness ratio and damping

1988 ◽  
Vol 417 (1852) ◽  
pp. 31-44 ◽  
Keyword(s):  
Pressure Pulse ◽  
Numerical Solutions ◽  
Short Pulse ◽  
Slenderness Ratio ◽  
Pulse Excitation ◽  
Solution Technique ◽  
Plastic Model ◽  
Elastic Plastic ◽  
Transverse Pressure ◽  
Special Circumstances

Anomalous results, including counterintuitive permanent displacements and scatter of numerical solutions, have been found for certain fixed-pin supported beams deformed plastically by a transverse pressure pulse. Similar difficulties may be anticipated in other pulse loaded beams and plates with constraints that prevent in-plane displacements. The present studies show some of the special circumstances in which these occur, with a simple elastic-plastic model of Shanley type. In particular, effects of changing a geometrical ratio and of including damping are shown over a range of load magnitudes. The influence of damping is remarkable. Unpredictability of final displacement is evident in special circumstances, such that the final displacement is hypersensitive to the parameters of the loading, structure and solution technique.

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