7.4 Gbit/s monolithically integrated GaAs/AlGaAs laser diode-laser driver structure

1993 ◽  
Vol 29 (19) ◽  
pp. 1694 ◽  
Author(s):  
J. Hornung ◽  
Z.-G. Wang ◽  
W. Bronner ◽  
E. Olander ◽  
K. Köhler ◽  
...  
2019 ◽  
Vol 9 (7) ◽  
pp. 1289 ◽  
Author(s):  
Mateusz Żbik ◽  
Piotr Wieczorek

Most modern pulsed laser systems require versatile laser diode drivers. A state-of-the-art pulsed laser driver should provide precise peak power regulation, high repetition rate, and pulse duration control. A new, charge line dual-FET transistor circuit structure was developed to provide all these features. The pulsed modulation current is adjustable up to Imax = 1.2 A, with the laser diode forward voltage acceptable up to UF max = 20 V. The maximum repetition rate is limited by a charge line circuit to frep max = 20 MHz. Compared to the conventional single transistor drivers, the solution proposed in this paper allows a precise, high resolution width regulation to be obtained, whereas a low pulse jitter is ensured. In the solution, two separate, out-of-phase signals are used to trigger the individual Field Effect Transistors (FET). The resultant pulsed modulation current full-width-at-half-maxima (FWHM) is regulated from ~200 ps up to 2 ns. All control and timing signals are generated with a popular Field-Programmable Gate Array (FPGA) digital circuitry. The use of standard FPGA devices ensures the low cost and high reliability of the circuit, which are not available in laser drivers consisting of sophisticated analogue adjustable delay circuits.


Author(s):  
D.L. Huffaker ◽  
G. Balakrishnan ◽  
A. Jallipalli ◽  
M.N. Kutty ◽  
J. Tatebayashi ◽  
...  

2008 ◽  
Vol 44 (12) ◽  
pp. 1158-1163 ◽  
Author(s):  
Thomas J. Slight ◽  
Bruno Romeira ◽  
Liquan Wang ◽  
JosÉ M. L. Figueiredo ◽  
Edward Wasige ◽  
...  

2016 ◽  
Vol 41 (20) ◽  
pp. 4835 ◽  
Author(s):  
X. Guo ◽  
A. H. Quarterman ◽  
A. Wonfor ◽  
R. V. Penty ◽  
I. H. White

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Bin Li ◽  
Liang Xue ◽  
Nan Ji ◽  
Da Hui Wei

Laser current and temperature control circuits have been developed for a distributed feedback laser diode, which is applied as the light source of a tuneable diode laser absorption spectroscopy system. The laser’s temperature fluctuation can be limited within the range of −0.02 to 0.02°C, and good operation stability was observed through 15 hours of monitoring on the emitting wavelength of the laser. Response time of temperature modulation was tested which is suitable for the tuning requirements of gas detection systems. Laser current can be injected within the range from 40 to 80 mA. In addition, a linear power supply circuit has been developed to provide stable and low-noise power supply for the system. The physical principles of laser modulation theory are discussed before experiments. Experiments show that the output wavelength of the laser can be tuned accurately through changing the working current and temperature. The wavelength can be linearly controlled by temperature at 0.115 nm/°C (I = 70 mA) and be controlled by current at 0.0140 nm/mA (T = 25°C). This is essential for the tuneable diode laser absorption spectroscopy systems. The proposed cost-effective circuits can replace commercial instruments to drive the laser to meet the requirements of methane detection experiments. It can also be applied to detect other gases by changing the light source lasers and parameters of the circuits.


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