High power continuous-wave operation of 630 nm-band laser diode arrays

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Vol 34 (24) ◽  
pp. 2336 ◽  
Author(s):  
J.S. Osinski ◽  
Bo Lu ◽  
H. Zhao ◽  
B. Schmitt
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pp. 297-301 ◽  
Author(s):  
Zhenfu Wang ◽  
Te Li ◽  
Guowen Yang ◽  
Yunfei Song

1995 ◽  
Vol 66 (10) ◽  
pp. 1163-1165 ◽  
Author(s):  
J. A. Skidmore ◽  
M. A. Emanuel ◽  
R. J. Beach ◽  
W. J. Benett ◽  
B. L. Freitas ◽  
...  

Optics News ◽  
1989 ◽  
Vol 15 (12) ◽  
pp. 9
Author(s):  
M. Sakamoto ◽  
D. F. Welch ◽  
J. G. Endriz ◽  
D. R. Scifres ◽  
W. Streifer

1996 ◽  
Vol 24 (Supplement) ◽  
pp. 85-88
Author(s):  
H. Kan ◽  
T. Kanzaki ◽  
H. Miyajima ◽  
Y. Ito ◽  
K. Matsui ◽  
...  

1991 ◽  
Vol 27 (5) ◽  
pp. 464 ◽  
Author(s):  
D.W. Nam ◽  
R.R. Craig ◽  
D.G. Mehuys ◽  
D.F. Welch

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Vol 42 (11) ◽  
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Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
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Ping Chen ◽  
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Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.


2007 ◽  
Vol 56 (10) ◽  
pp. 5831
Author(s):  
Su Zhou-Ping ◽  
Lou Qi-Hong ◽  
Dong Jing-Xing ◽  
Zhou Jun ◽  
Wei Yun-Rong

1999 ◽  
Vol 35 (20) ◽  
pp. 1739 ◽  
Author(s):  
X. He ◽  
A. Ovtchinnikov ◽  
S. Yang ◽  
J. Harrison ◽  
A. Feitisch

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