Electromigration-induced failure of GaN multi-quantum well light emitting diode

2000 ◽  
Vol 36 (10) ◽  
pp. 908 ◽  
Author(s):  
Hyunsoo Kim ◽  
Hyundoek Yang ◽  
Chul Huh ◽  
Sang-Woo Kim ◽  
Seong-Ju Park ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Multi Quantum Well

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance

2021 ◽  
Vol 121 ◽  
pp. 105431
Author(s):  
Hayatun Najihah Hussin ◽  
Noor Azrina Talik ◽  
Mohd Nazri Abd Rahman ◽  
Mohd Raqif Mahat ◽  
Prabakaran Poopalan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Regime Transition ◽  
Light Emitting ◽  
Growth Regime ◽  
Multi Quantum Well

Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p–n junction engineering

2020 ◽  
Vol 127 (8) ◽  
pp. 085706 ◽  
Author(s):  
Lili Han ◽  
Minglong Zhao ◽  
Xiansheng Tang ◽  
Wenxue Huo ◽  
Zhen Deng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Luminescence Study ◽  
Multi Quantum Well

scholarly journals Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 295-299 ◽  
Author(s):  
D. Oriato ◽  
Alison B. Walker ◽  
W. N. Wang
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Energy Levels ◽  
Drift Diffusion Model ◽  
Light Emitting ◽  
Consistent Solution ◽  
Band Profile ◽  
Piezoelectric Field ◽  
Model Lattice ◽  
Multi Quantum Well

Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode. A self-consistent solution of Poisson and Schrödinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.

Effects of dislocations on the luminescence of GaN/InGaN multi-quantum-well light-emitting-diode layers

2004 ◽  
Vol 58 (21) ◽  
pp. 2614-2617 ◽  
Author(s):  
Y.-S Choi ◽  
J.-H Park ◽  
S.-S Kim ◽  
H.-J Song ◽  
S.-H Lee ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Multi Quantum Well

The Effect of Temperature on the Efficiency of Nitride-based Multi-quantum well Light-emitting Diodes

2009 ◽  
Vol 1229 ◽  
Author(s):  
Oskari Heikkilä ◽  
Jani Oksanen ◽  
Jukka Tulkki
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Active Regions ◽  
Effect Of Temperature ◽  
Current Transport ◽  
Internal Heating ◽  
Light Emitting ◽  
Self Consistent ◽  
Multi Quantum Well ◽  
Present Simulation

AbstractWe have recently developed a self consistent light-emitting diode (LED) model that accounts for the current transport and internal heating in AlGaAs-GaAs LEDs. In this paper we extend the model to describe multi-quantum well (MQW) active regions and III-N materials, within the limits of the currently known values and temperature dependencies of the recombination parameters in these materials. The MQW description accounts for the effect of the reduced wave function overlap to the recombination. We present simulation results obtained for an InGaN MQW LED with 4 wells at selected temperatures and discuss the factors limiting the efficiency and luminescent output of LEDs.

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