Sensing signal input bearing to sensor array using velocity-sensitive spatiotemporal filters

2004 ◽  
Vol 40 (3) ◽  
pp. 211 ◽  
Author(s):  
M.A. Clapp ◽  
R. Etienne-Cummings
2017 ◽  
Vol 137 (8) ◽  
pp. 481-486
Author(s):  
Junichi Hayasaka ◽  
Kiwamu Shirakawa ◽  
Nobukiyo Kobayashi ◽  
Kenichi Arai ◽  
Nobuaki Otake ◽  
...  

2017 ◽  
Vol 137 (12) ◽  
pp. 438-443
Author(s):  
Takahiro Yamashita ◽  
Seiichi Takamatsu ◽  
Hironao Okada ◽  
Toshihiro Itoh ◽  
Takeshi Kobayashi

Author(s):  
Andreas I. Koutrouvelis ◽  
Richard C. Hendriks ◽  
Richard Heusdens ◽  
Jesper Jensen

2017 ◽  
Vol 18 (2) ◽  
pp. 302-322
Author(s):  
Fajar Hardoyono

Abstract: The development of aromatic sensor array instrument for the detection of alcohol in perfume. The research was conducted by developing the sensor array using 8 sensors made of metal oxide semiconductor. The sensor types used in this study consisted of TGS 813, TGS 822, TGS 2600, TGS 826, TGS 2611, TGS 2620, TGS 2612 and TGS 2602. Response patterns of 8 sensors formed a sensor array pattern used to detect the aroma of 2 groups of samples perfume made from the essential oil of ginger. The first sample group is pure ginger atsiri oil without mixed alcohol. The second sample group was made from the ginger atsiri oil mixed with alcohol with a level of 0.02 M. The results of the data recording show that the developed instrument is able to dissect the first sample group with the second sample group. Data analysis using principal component analysis method (PCA shows that the instrument is able to distinguish the contaminated alcohol perfume group 0.2 M with the alcohol-free perfume group with 100% accuracy. Keywords: Sensor Aroma, Perfume.


1997 ◽  
Author(s):  
D. Pal ◽  
S. Sinha ◽  
D. Banerjee ◽  
C. Baker ◽  
M. Pandey ◽  
...  

Author(s):  
Jong Hak Lee ◽  
Yu Jun Lee ◽  
Jung Sam Kim ◽  
Seo Kyung Jeong ◽  
Min Su Kim ◽  
...  

Abstract In this work, crystalline defects (dislocations) occurred in the silicon substrate during annealing SOD (Spin On Dielectric) which is an easy choice for its superior STI gap-fill ability. The reversal of address data that share same SIO (Signal Input Out) line in a DQ arises from crystalline defects. The failure analysis of physical methods has difficulty finding minute defects within the active because it is scarcely detectable from the top view. Situation can be well understood by electrical analysis using the nano probe. Due to its ability to probing contact nodes around the fail area, a ring type crystalline defect which is hardly detected from the top view was effectively analyzed by 3D TEM with the assistance of nano probe. This work shows that hybrid analysis of electrical method by nano probe and physical method by 3D TEM is useful and effective in failure analysis in semiconductor.


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