Graph connectivity in electrical studies

Author(s):  
F.L. Gaol ◽  
B. Widjaja
2021 ◽  
Vol 32 (8) ◽  
pp. 10224-10239
Author(s):  
M. El-Shahat ◽  
M. Mokhtar ◽  
M. M. Rashad ◽  
M. A. Mousa
Keyword(s):  

2020 ◽  
Vol 14 (4) ◽  
pp. 1-19
Author(s):  
Xiaofeng Zhu ◽  
Shichao Zhang ◽  
Jilian Zhang ◽  
Yonggang Li ◽  
Guangquan Lu ◽  
...  

2021 ◽  
pp. 116670
Author(s):  
Hala A. Kiwaan ◽  
Farid Sh. Mohamed ◽  
Naser A. El-Ghamaz ◽  
Nesma M. Beshry ◽  
Ashraf A. El-Bindary

Symmetry ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 1227
Author(s):  
Shyam Sundar Santra ◽  
Prabhakaran Victor ◽  
Mahadevan Chandramouleeswaran ◽  
Rami Ahmad El-Nabulsi ◽  
Khaled Mohamed Khedher ◽  
...  

Graph connectivity theory is important in network implementations, transportation, network routing and network tolerance, among other things. Separation edges and vertices refer to single points of failure in a network, and so they are often sought-after. Chandramouleeswaran et al. introduced the principle of semiring valued graphs, also known as S-valued symmetry graphs, in 2015. Since then, works on S-valued symmetry graphs such as vertex dominating set, edge dominating set, regularity, etc. have been done. However, the connectivity of S-valued graphs has not been studied. Motivated by this, in this paper, the concept of connectivity in S-valued graphs has been studied. We have introduced the term vertex S-connectivity and edge S-connectivity and arrived some results for connectivity of a complete S-valued symmetry graph, S-path and S-star. Unlike the graph theory, we have observed that the inequality for connectivity κ(G)≤κ′(G)≤δ(G) holds in the case of S-valued graphs only when there is a symmetry of the graph as seen in Examples 3–5.


1989 ◽  
Vol 25 (4) ◽  
pp. 750-765 ◽  
Author(s):  
R.L. Doughty ◽  
L. Gise ◽  
E.W. Kalkstein ◽  
R.D. Willoughby

2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Shanyue Zhao ◽  
Yinqun Hua ◽  
Ruifang Chen ◽  
Jian Zhang ◽  
Ping Ji

The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along thec-axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.


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