Structural and Electrical Studies on ZnO-Based Thin Films by Laser Irradiation

The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along thec-axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.