Фотопроводимость и поглощение инфракрасного излучения в квантовых ямах p-GaAs/AlGaAs

The spectra of low-temperature impurity-assisted far and mid-infrared photoconductivity and absorption in nanostructure with multiple GaAs/AlGaAs quantum wells doped with acceptors are investigated. The experimentally obtained absorption and photoconductivity spectra correlate well with each other. According to the hole and acceptor state energy spectrum calculations the spectral features related to the optical hole transitions from the ground acceptor state to the delocalized states of valence subbands, to the excited acceptor states and to the delocalized states above the quantum well (photoionization) are identified in the absorption and photoconductivity spectra.

Identifying the acceptor state in NiO hole collection layers: direct observation of exciton dissociation and interfacial hole transfer across a Fe2O3/NiO heterojunction

Ultrafast XUV reflection–absorption identifies interfacial charge transfer mechanism and the hole acceptor state in a Fe2O3/NiO model heterojunction

Structural and Electrical Studies on ZnO-Based Thin Films by Laser Irradiation

The effects of laser irradiation on the structural and electrical properties of ZnO-based thin films were investigated. The XRD pattern shows that the thin films were highly textured along thec-axis and perpendicular to the surface of the substrate. Raman spectra reveal that Bi2O3segregates mainly at ZnO-ZnO grain boundaries. After laser irradiation processing, the grain size of the film was reduced significantly, and the intrinsic atomic defects of grain boundaries and Bi element segregated at the grain boundary were interacted frequently and formed the composite defects of acceptor state. The nonlinear coefficient increased to 24.31 and the breakdown voltage reduced to 5.34 V.

Theoretical studies of single magnetic impurities on the surface of semiconductors and topological insulators

ABSTRACTWe present results of theoretical studies of transition metal dopants in GaAs, based on microscopic tight-binding model and ab-initio calculations. We focus in particular on how the vicinity of surface affects the properties of the hole-acceptor state, its magnetic anisotropy and its magnetic coupling to the magnetic dopant. In agreement with STM experiments, Mn substitutional dopants on the (110) GaAs surface give rise to a deep acceptor state, whose wavefunction is localized around the Mn center. We discuss a refinement of the theory that introduces explicitly the d-levels for the TM dopant. The explicit inclusion of d-levels is particularly important for addressing recent STM experiments on substitutional Fe in GaAs. In the second part of the paper we discuss an analogous investigation of single dopants in Bi2Se3 three-dimensional topological insulators, focusing in particular on how substitutional impurities positioned on the surface affect the electronic structure in the gap. We present explicit results for BiSe antisite defects and compare with STM experiments.

Effects of BN Dopant on Electrical Characteristics of Barium-Excessive BaTiO3 Ceramics for Laminated Positive Temperature Coefficient Thermistors Fabricated by Tape Casting Technique

The barium-excessive BaTiO3 ceramics with BN addition for laminated positive temperature coefficient (PTC)thermistors are fabricated. The tape casting technique and reduction/reoxidation process are employed into the fabricating procedure. The influences of BN additive on ceramic characteristics are discussed. The addition over 5% leads to rectangular and abnormal large grains. The 5% BN-doped ceramics shows a resistivity of 233 Ω•cm and PTC jump of 3.4 orders of magnitude. The charge carrier density in grain bulk and acceptor state density at grain boundaries are evaluated. The correlation of BN doping amount with room temperature resistivity, PTC jump, reoxidation effect as well as charge carrier and acceptor state density are investigated.