scholarly journals Development of a transparent single-grid-type MSGC based on LCD technology

2018 ◽  
Vol 174 ◽  
pp. 02004
Author(s):  
Hiroyuki Takahashi ◽  
Hiroaki Miyoshi ◽  
Lian Xuan ◽  
Yuki Mitsuya ◽  
Kenji Shimazoe ◽  
...  
Keyword(s):  
Thin Film ◽  
Fine Structure ◽  
Liquid Crystal ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Gas Mixtures ◽  
Transparent Electrodes ◽  
Large Area ◽  
Successful Operation ◽  
Integrated Device

We are developing a multi-grid-type MSGC based on the liquid crystal display (LCD) technology, which enables a large area and fine structure. Single-grid-type MSGC using transparent electrodes has been fabricated and successfully operated in several different gas mixtures. The use of LCD technology allows us to integrate some simple electronics using thin film transistors. Such an integrated device is our next target. The successful operation of Single-grid-type MSGC is the very important first step for us.

Low-Temperature Polycrystalline Silicon Thin-Film Transistors for Large-Area Liquid Crystal Display

1992 ◽  
Vol 31 (Part 1, No. 12B) ◽  
pp. 4559-4562 ◽  
Author(s):  
Yutaka Miyata ◽  
Mamoru Furuta ◽  
Tatsuo Yoshioka ◽  
Tetsuya Kawamura
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Liquid Crystal Display ◽  
Large Area ◽  
Silicon Thin Film

Continued Development of R.F. Sputtered a-Si:H Thin-Film Transistors Towards an All-Sputtered Device

1985 ◽  
Vol 49 ◽  
Author(s):  
J. Allison ◽  
D.P. Turner ◽  
D.C. Cousins
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Thin Film Transistors ◽  
Crystalline Silicon ◽  
Liquid Crystal Display ◽  
Low Cost ◽  
Silicon Oxynitride ◽  
Large Area ◽  
Current Ratio ◽  
Crystalline Substrate

AbstractPrototype thin film transistors have previously been fabricated by r.f. magnetron sputtering of a-Si:H on to CVD Si02 using a crystalline silicon gate. These devices exhibited an on/off current ratio of four orders of magnitude for gate voltages as low as 10 volts. This demonstrated the suitability of the sputtered layer for liquid crystal display applications.The use of a crystalline substrate negates the advantages of using a thin film,such as large area capability and low cost, so we have turned our attention to the provision of a sputtered dielectric. Several candidate materials have been considered, including Si02, Si3N4, Ta205, AIN and Ti02. We present the characteristics of our first all-sputtered transistor utilising an Si02 gate,and assess the dielectric properties and potential of other materials, with emphasis on the silicon oxynitride system.

Pixel Architecture for Low-Power Liquid Crystal Display Comprising Oxide and Ferroelectric Memory Thin Film Transistors

2015 ◽  
Vol 36 (6) ◽  
pp. 585-587 ◽  
Author(s):  
Seung-Hyuck Lee ◽  
Jongbin Kim ◽  
Seong Ho Yoon ◽  
Kyeong-Ah Kim ◽  
Sung-Min Yoon ◽  
...  
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Low Power ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Ferroelectric Memory

Field-Induction-Drain Thin-Film Transistors for Liquid-Crystal Display Applications

1991 ◽  
Vol 30 (Part 1, No. 11B) ◽  
pp. 3302-3307 ◽  
Author(s):  
Keiji Tanaka ◽  
Shiro Suyama ◽  
Kinya Kato
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Field Induction

A 5-in. flexible ferroelectric liquid-crystal display driven by organic thin-film transistors

2008 ◽  
Vol 16 (12) ◽  
pp. 1251 ◽  
Author(s):  
Yoshihide Fujisaki ◽  
Hiroto Sato ◽  
Tatsuya Takei ◽  
Toshihiro Yamamoto ◽  
Hideo Fujikake ◽  
...  
Keyword(s):  
Thin Film ◽  
Liquid Crystal ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Organic Thin Film Transistors ◽  
Ferroelectric Liquid Crystal ◽  
Organic Thin Film
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