Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells
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The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.
2019 ◽
Vol 7
(24)
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pp. 7288-7298
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2017 ◽
Vol 23
(18)
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pp. 4373-4379
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2021 ◽
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2016 ◽
Vol 9
(7)
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pp. 2326-2333
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