scholarly journals ATMOSPHERIC PRESSURE METAL-ORGANIC CHEMICAL VAPOUR DEPOSITION (APMOCVD) FOR THE GROWTH OF ZnSe EPILAYERS ON (100)-GaAs SUBSTRATES USING DIETHYL-ZINC (DEZn) AND HYDROGEN SELENIDE (H2Se)

1991 ◽  
Vol 02 (C2) ◽  
pp. C2-945-C2-951
Author(s):  
A. BOUMAZA ◽  
H. M. YATES ◽  
L. JAMES ◽  
I. A. PATTERSON ◽  
D. J. COLE-HAMILTON ◽  
...  
Keyword(s):  
Chemical Vapour Deposition ◽  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Hydrogen Selenide ◽  
Diethyl Zinc ◽  
Gaas Substrates ◽  
Metal Organic

Structural and morphological characterization of the Cd-rich region in Cd1-xZnxO thin films grown by atmospheric pressure metal organic chemical vapour deposition

2019 ◽  
Vol 683 ◽  
pp. 128-134 ◽  
Author(s):  
Adelaida Huerta-Barberà ◽  
Esther de Prado ◽  
Maria del Carmen Martínez-Tomás ◽  
Saïd Agouram ◽  
Elias Muñoz ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Morphological Characterization ◽  
Organic Chemical ◽  
Rich Region ◽  
Metal Organic

scholarly journals Determination of the Unit Cell for an Epitaxial Layer of Hg1-xCdxTe Deposited on GaAs

1992 ◽  
Vol 45 (6) ◽  
pp. 773 ◽  
Author(s):  
Zhu Nanchang ◽  
Andrew W Stevenson ◽  
Li Runshen
Keyword(s):  
Epitaxial Layer ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Unit Cell ◽  
Organic Chemical ◽  
Gaas Substrates ◽  
Metal Organic ◽  
Structural Aspects

Stevenson et al. (1991) reported structural aspects of six metal organic chemical vapour deposition (MOCVD)-grown Hg1-xCdxTe epitaxial layers on novel GaAs substrates. Large layer miscuts (the angle between the surface and the Bragg planes of the nominal rientation) of 4�3� were reported for the samples of (311) and (3II) orientation, whereas the substrate miscuts were less than 1� (0�94� and 0�84� respectively).

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