Formation of high moisture and dopant diffusion resistivity silicon nitride films by catalytic-CVD method

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-901-Pr3-906 ◽  
Author(s):  
A. Izumi ◽  
H. Sato ◽  
H. Matsumura
Keyword(s):  
Silicon Nitride ◽  
Dopant Diffusion ◽  
High Moisture ◽  
Cvd Method ◽  
Silicon Nitride Films ◽  
Catalytic Cvd

Ion Beam Analysis of the Concentration and Thermal Release of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD Method

1988 ◽  
Vol 27 (Part 1, No. 8) ◽  
pp. 1406-1410 ◽  
Author(s):  
Takashi Kuroi ◽  
Kenji Umezawa ◽  
Junji Yamane ◽  
Fumiya Shoji ◽  
Kenjiro Oura ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Ion Beam ◽  
Plasma Cvd ◽  
Ion Beam Analysis ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Thermal Release ◽  
Silicon Nitride Films ◽  
Beam Analysis

Thermal Stability of Hydrogen in Silicon Nitride Films Prepared by ECR Plasma CVD method

1988 ◽  
Vol 27 (Part 1, No. 4) ◽  
pp. 528-533 ◽  
Author(s):  
Takashi Hirao ◽  
Takeshi Kamada ◽  
Masatoshi Kitagawa ◽  
Kentaro Setsune ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Silicon Nitride ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Silicon Nitride Films ◽  
Thermal Stability Of

Properties of Silicon Nitride Films Prepared by Combination of Catalytic-Nitridation and Catalytic-Cvd

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Izumi ◽  
A. Kikkawa ◽  
K. Higashimine ◽  
H. Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Method ◽  
Catalytic Chemical Vapor Deposition ◽  
Flat Interface ◽  
Silicon Nitride Films ◽  
Catalytic Cvd

AbstractThis paper reports about the interface of silicon nitride (SiNx) formed on Si(100) prepared by combination of catalytic-nitridation and catalytic-vapor deposition method in a catalytic chemical vapor deposition system. It is found that flat interface of SiNx/Si(100) is formed by inserting nitridation layer before growing the SiNx films.

Influence of Deposition Conditions on the Properties of Silicon Nitride Films Prepared by the ECR Plasma CVD Method

1987 ◽  
Vol 26 (Part 1, No. 12) ◽  
pp. 2015-2021 ◽  
Author(s):  
Takashi Hirao ◽  
Kentaro Setsune ◽  
Masatoshi Kitagawa ◽  
Takeshi Kamada ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Silicon Nitride Films ◽  
Deposition Conditions

Hydrogen Concentration and Bond Configurations in Silicon Nitride Films Prepared by ECR Plasma CVD Method

1988 ◽  
Vol 27 (Part 1, No. 1) ◽  
pp. 30-34 ◽  
Author(s):  
Takashi Hirao ◽  
Kentaro Setsune ◽  
Masatoshi Kitagawa ◽  
Takeshi Kamada ◽  
Kiyotaka Wasa ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Concentration ◽  
Plasma Cvd ◽  
Ecr Plasma ◽  
Cvd Method ◽  
Silicon Nitride Films
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