Properties of Silicon Nitride Films Prepared by Combination of Catalytic-Nitridation and Catalytic-Cvd
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AbstractThis paper reports about the interface of silicon nitride (SiNx) formed on Si(100) prepared by combination of catalytic-nitridation and catalytic-vapor deposition method in a catalytic chemical vapor deposition system. It is found that flat interface of SiNx/Si(100) is formed by inserting nitridation layer before growing the SiNx films.
1997 ◽
Vol 36
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pp. 7035-7040
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2003 ◽
Vol 430
(1-2)
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pp. 100-103
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1989 ◽
Vol 28
(Part 1, No. 10)
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pp. 2157-2161
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