Direct observation of extended monolayer flat islands at metalorganic vapor phase epitaxy grown Al0.5Ga0.5As‐GaAs single quantum well interfaces

1988 ◽  
Vol 53 (20) ◽  
pp. 1923-1925 ◽  
Author(s):  
F. J. Stützler ◽  
S. Fujieda ◽  
M. Mizuta ◽  
K. Ishida
Keyword(s):  
Quantum Well ◽  
Direct Observation ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
Single Quantum Well

Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1961-1965 ◽  
Author(s):  
Akihiko Ishibashi ◽  
Hidemi Takeishi ◽  
Nobuyuki Uemura ◽  
Masahiro Kume ◽  
Yasufumi Yabuuchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure

Low-Temperature Metal-Organic Vapor-Phase Epitaxy Growth and Performance of 1.3-µm GaInNAs/GaAs Single Quantum Well Lasers

2002 ◽  
Vol 41 (Part 1, No. 2B) ◽  
pp. 1040-1042 ◽  
Author(s):  
Glenn-Yves Plaine ◽  
Carl Asplund ◽  
Petrus Sundgren ◽  
Sebastian Mogg ◽  
Mattias Hammar
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Organic Vapor ◽  
Metal Organic ◽  
And Performance
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