Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon

1992 ◽  
Vol 60 (17) ◽  
pp. 2083-2085 ◽  
Author(s):  
T. P. Ong ◽  
Fulin Xiong ◽  
R. P. H. Chang ◽  
C. W. White
1992 ◽  
Vol 7 (9) ◽  
pp. 2429-2439 ◽  
Author(s):  
T.P. Ong ◽  
Fulin Xiong ◽  
R.P.H. Chang ◽  
C.W. White

The nucleation and growth of diamond crystals on single crystal copper surfaces has been studied. Microwave plasma enhanced chemical vapor deposition (MPECVD) was used for diamond nucleation and growth. Prior to diamond nucleation, the single crystal copper surface is modified by carbon ion implantation at an elevated temperature (∊820 °C). This procedure leads to the formation of a graphite film on the copper surface, resulting in an enhancement of diamond crystallite nucleation. A simple lattice model has been constructed to describe the mechanism of diamond nucleation on graphite as 〈111〉diamond parallel to 〈0001〉graphite and 〈110〉diamond parallel to 〈11$\overline 1$0〉graphite. This leads to a good understanding of diamond growth on carbon-implanted copper surfaces.


1993 ◽  
Vol 294 (1-2) ◽  
pp. A662
Author(s):  
Upali A. Jayasooriya ◽  
Christopher E. Anson ◽  
Osama Al-Jowder ◽  
Giuseppe D'Alfonso ◽  
Pier Luigi Stanghellini ◽  
...  

1950 ◽  
Vol 21 (10) ◽  
pp. 971-973 ◽  
Author(s):  
T. N. Rhodin

1993 ◽  
Vol 294 (1-2) ◽  
pp. 131-140 ◽  
Author(s):  
Upali A. Jayasooriya ◽  
Christopher E. Anson ◽  
Osama Al-Jowder ◽  
Giuseppe D'Alfonso ◽  
Pier Luigi Stanghellini ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document