Optimization of the growth parameters for the molecular‐beam epitaxial growth of strained In0.16Ga0.84As/Al0.33Ga0.67As single quantum‐well structures
2001 ◽
Vol 19
(4)
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pp. 1447
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1994 ◽
Vol 141
(1-2)
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pp. 299-303
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1998 ◽
Vol 16
(5)
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pp. 2644
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