Molecular Beam Epitaxial Growth of the InSb/CdTe Single Quantum Well Structures on GaAs (100) Substrates.

Shinku ◽

10.3131/jvsj.43.333 ◽

2000 ◽

Vol 43 (3) ◽

pp. 333-336 ◽

Author(s):

Kazuto KOIKE ◽

Kuniaki SUEYOSHI ◽

Ken-ichi TANAKA ◽

Shuwei LI ◽

Katsuhiro FUJII ◽

...

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Structures ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Optimization of the growth parameters for the molecular‐beam epitaxial growth of strained In0.16Ga0.84As/Al0.33Ga0.67As single quantum‐well structures

Applied Physics Letters ◽

10.1063/1.109920 ◽

1993 ◽

Vol 63 (6) ◽

pp. 824-826 ◽

Author(s):

M. T. Emeny ◽

M. S. Skolnick ◽

C. R. Whitehouse ◽

D. G. Hayes ◽

P. D. J. Calcott ◽

...

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Growth Parameters ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Structures ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Dependence of the interface sharpness of a Ge single quantum well on molecular‐beam‐epitaxial growth conditions

Journal of Applied Physics ◽

10.1063/1.357924 ◽

1994 ◽

Vol 76 (12) ◽

pp. 8042-8047 ◽

Author(s):

W. Kissinger ◽

H. J. Osten ◽

G. Lippert ◽

B. Dietrich ◽

E. Bugiel

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Growth Conditions ◽

Single Quantum ◽

Single Quantum Well ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of ZnMgO∕ZnO∕ZnMgO single quantum well structure on Si(111) substrate

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2200381 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1668 ◽

Author(s):

Miki Fujita ◽

Ryotaro Suzuki ◽

Masanori Sasajima ◽

Tomohiro Kosaka ◽

Yuparwadee Deesirapipat ◽

...

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Molecular Beam Epitaxial ◽

Quantum Well Structure ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth of InGaP/InAlP quantum well structures for the visible wavelength region

Applied Physics Letters ◽

10.1063/1.95150 ◽

1984 ◽

Vol 45 (2) ◽

pp. 152-154 ◽

Author(s):

Y. Kawamura ◽

H. Asahi

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Wavelength Region ◽

Quantum Well Structures ◽

Molecular Beam Epitaxial ◽

Visible Wavelength ◽

Molecular Beam Epitaxial Growth

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Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80137-2 ◽

1995 ◽

Vol 150 ◽

pp. 1241-1245

Author(s):

H. Künzel ◽

J. Böttcher ◽

A. Hase ◽

S. Strähle ◽

E. Kohn

Keyword(s):

Epitaxial Growth ◽

High Performance ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

High Electron ◽

Single Quantum ◽

Single Quantum Well ◽

High Electron Mobility ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Molecular beam epitaxial growth and characterization of In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/sub y//In/sub 0.52/Al/sub 0.48/As strained quantum well structures on InP substrates

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014614 ◽

2003 ◽

Author(s):

M. Amano ◽

Y. Kawamura ◽

M. Fujimoto ◽

T. Yokoyama ◽

N. Inoue

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Quantum Well Structures ◽

Molecular Beam Epitaxial ◽

Strained Quantum Well ◽

Molecular Beam Epitaxial Growth ◽

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Molecular beam epitaxial growth of InAs/(Al, Ga)Sb quantum-well structures on germanium substrates

Applied Physics Letters ◽

10.1063/1.123348 ◽

1999 ◽

Vol 74 (22) ◽

pp. 3371-3373 ◽

Author(s):

M. Behet ◽

J. De Boeck ◽

G. Borghs ◽

P. Mijlemans

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Quantum Well Structures ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth ◽

Germanium Substrates

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Molecular beam epitaxial growth of IV–VI multiple quantum well structures on Si(111) and BaF[sub 2](111) and optical studies of epilayer heating

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1385915 ◽

2001 ◽

Vol 19 (4) ◽

pp. 1447 ◽

Author(s):

H. Z. Wu ◽

P. J. McCann ◽

O. Alkhouli ◽

X. M. Fang ◽

D. McAlister ◽

...

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Optical Studies ◽

Quantum Well Structures ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth

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Metalorganic molecular beam epitaxial growth of highly uniform InGaAsP quantum well structures using an indium-free holder

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90123-6 ◽

1994 ◽

Vol 141 (1-2) ◽

pp. 299-303 ◽

Author(s):

Hideo Sugiura ◽

Manabu Mitsuhara ◽

Ryuzo Iga ◽

Norio Yamamoto

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Quantum Well Structures ◽

Molecular Beam Epitaxial ◽

Molecular Beam Epitaxial Growth ◽

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Molecular beam epitaxial growth of InAs/AlGaAsSb deep quantum well structures on GaAs substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.590249 ◽

1998 ◽

Vol 16 (5) ◽

pp. 2644 ◽

Author(s):

N. Kuze

Keyword(s):

Quantum Well ◽

Epitaxial Growth ◽

Molecular Beam ◽

Quantum Well Structures ◽

Molecular Beam Epitaxial ◽

Gaas Substrates ◽

Molecular Beam Epitaxial Growth

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