Oxide thickness dependence of interface trap generation in a metal‐oxide‐semiconductor structure during substrate hot‐hole injection

Semiconductor Structure ◽

Thickness Dependence ◽

Oxide Semiconductor ◽

Hole Injection ◽

Interface Trap ◽

Hole Trapping and Detrapping Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconductor Structure

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.668 ◽

1994 ◽

Vol 33 (Part 1, No. 1B) ◽

pp. 668-671

Author(s):

Quazi Deen Mohd Khosru ◽

Naoki Yasuda ◽

Kenji Taniguchi ◽

Chihiro Hamaguchi

Keyword(s):

Metal Oxide ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Hole Injection ◽

Hole Trapping ◽

On the oxide thickness estimation from the current-voltage characteristics of thin metal-oxide-semiconductor structure

The 14th International Conference on Microelectronics, ◽

10.1109/icm-02.2002.1161543 ◽

2005 ◽

Author(s):

J.M. Mohaidat ◽

R.N. Ahmad-Bitar

Keyword(s):

Metal Oxide ◽

Oxide Thickness ◽

Semiconductor Structure ◽

Thin Metal ◽

Oxide Semiconductor ◽

Thickness Estimation ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Generation and relaxation phenomena of positive charge and interface trap in a metal‐oxide‐semiconductor structure

Journal of Applied Physics ◽

10.1063/1.359445 ◽

1995 ◽

Vol 77 (9) ◽

pp. 4494-4503 ◽

Cited By ~ 17

Author(s):

Quazi Deen Mohd Khosru ◽

Naoki Yasuda ◽

Kenji Taniguchi ◽

Chihiro Hamaguchi

Keyword(s):

Metal Oxide ◽

Positive Charge ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Interface Trap ◽

Relaxation Phenomena ◽

Damage effect of hafnium oxide gate dielectric based metal–oxide–semiconductor structure under gamma-ray irradiation

AIP Advances ◽

10.1063/5.0048080 ◽

2021 ◽

Vol 11 (6) ◽

pp. 065304

Author(s):

Man Ding ◽

Xin Liu

Keyword(s):

Metal Oxide ◽

Hafnium Oxide ◽

Gamma Ray ◽

Gate Dielectric ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Damage Effect ◽

Gamma Ray Irradiation ◽

Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method

Solid-State Electronics ◽

10.1016/j.sse.2016.04.007 ◽

2016 ◽

Vol 122 ◽

pp. 56-63 ◽

Cited By ~ 9

Author(s):

S. Toumi ◽

Z. Ouennoughi ◽

K.C. Strenger ◽

L. Frey

Keyword(s):

Metal Oxide ◽

Optimization Method ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Nordheim Tunneling ◽

Interface characterization of a metal-oxide-semiconductor structure by biased X-ray photoelectron spectroscopy

Surface and Interface Analysis ◽

10.1002/sia.3154 ◽

2010 ◽

Vol 42 (2) ◽

pp. 70-76 ◽

Cited By ~ 1

Author(s):

M. Yoshitake ◽

K. Ohmori ◽

T. Chikyow

Keyword(s):

Metal Oxide ◽

Photoelectron Spectroscopy ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

X Ray ◽

Interface Characterization ◽

Accurate measurement of extremely low surface recombination velocities on charged, oxidized silicon surfaces using a simple metal-oxide-semiconductor structure

Applied Physics Letters ◽

10.1063/1.2434172 ◽

2007 ◽

Vol 90 (4) ◽

pp. 042104 ◽

Cited By ~ 19

Author(s):

W. E. Jellett ◽

K. J. Weber

Keyword(s):

Metal Oxide ◽

Surface Recombination ◽

Semiconductor Structure ◽

Silicon Surfaces ◽

Oxide Semiconductor ◽

Simple Metal ◽

Simple Metal Oxide ◽

Highly efficient diamond electromechanical transducer based on released metal–oxide–semiconductor structure

Applied Physics Letters ◽

10.1063/5.0058646 ◽

2021 ◽

Vol 119 (7) ◽

pp. 073504

Author(s):

Meiyong Liao ◽

Liwen Sang ◽

Huanying Sun ◽

Tiefu Li ◽

Satoshi Koizumi

Keyword(s):

Metal Oxide ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Electromechanical Transducer ◽

Highly Efficient ◽

Interface Barrier Determination by Internal Photoemission: Applications to Metal/Oxide/Semiconductor Structure

ECS Meeting Abstracts ◽

10.1149/ma2008-01/18/713 ◽

2008 ◽

Keyword(s):

Metal Oxide ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Internal Photoemission ◽

Interface Barrier ◽

P‐213: Late‐News‐Poster: Electroluminescence of Oxide Phosphor in Metal‐Oxide‐Semiconductor Structure

SID Symposium Digest of Technical Papers ◽

10.1002/sdtp.14250 ◽

2020 ◽

Vol 51 (1) ◽

pp. 1787-1789

Author(s):

Taewook Kang ◽

Jehong Park ◽

Boowon Park ◽

Jimin Lim ◽

Hyunwoo Kang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Late News ◽