scholarly journals Accurate measurement of extremely low surface recombination velocities on charged, oxidized silicon surfaces using a simple metal-oxide-semiconductor structure

2007 ◽  
Vol 90 (4) ◽  
pp. 042104 ◽  
Author(s):  
W. E. Jellett ◽  
K. J. Weber
Keyword(s):  
Metal Oxide ◽  
Surface Recombination ◽  
Metal Oxide Semiconductor ◽  
Semiconductor Structure ◽  
Silicon Surfaces ◽  
Oxide Semiconductor ◽  
Simple Metal ◽  
Simple Metal Oxide ◽  
Metal Oxide Semiconductor Structure

InAs-based metal-oxide-semiconductor structure formation in low-energy Townsend discharge

2015 ◽  
Vol 107 (17) ◽  
pp. 173501 ◽  
Author(s):  
M. S. Aksenov ◽  
A. Yu. Kokhanovskii ◽  
P. A. Polovodov ◽  
S. F. Devyatova ◽  
V. A. Golyashov ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Structure Formation ◽  
Metal Oxide Semiconductor ◽  
Semiconductor Structure ◽  
Low Energy ◽  
Oxide Semiconductor ◽  
Townsend Discharge ◽  
Metal Oxide Semiconductor Structure
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