AlGaAs/GaAs charge injection transistor/negative resistance field‐effect transistor fabricated with shallow Pd/Ge ohmic contacts

1994 ◽  
Vol 64 (3) ◽  
pp. 306-308 ◽  
Author(s):  
Jiun‐Tsuen Lai ◽  
Joseph Ya‐min Lee
Keyword(s):  
Field Effect ◽  
Ohmic Contacts ◽  
Field Effect Transistor ◽  
Charge Injection ◽  
Negative Resistance ◽  
Effect Transistor

scholarly journals Enhanced Charge Injection Properties of Organic Field Effect Transistor by Molecular Implantation Doping

2020 ◽  
Vol 32 (38) ◽  
pp. 2003126
Author(s):  
Youngrok Kim ◽  
Seungjun Chung ◽  
Kyungjune Cho ◽  
David Harkin ◽  
Wang‐Taek Hwang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Injection ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

p‐channel negative resistance field‐effect transistor

1990 ◽  
Vol 56 (11) ◽  
pp. 1058-1060 ◽  
Author(s):  
M. E. Favaro ◽  
L. M. Miller ◽  
R. P. Bryan ◽  
J. J. Alwan ◽  
J. J. Coleman
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Negative Resistance ◽  
Effect Transistor

Doped Channel MBE GaAs Field Effect Transistor (MEDFET) with Laser Processed Ohmic Contacts

1988 ◽  
Vol 144 ◽  
Author(s):  
G. Halkias ◽  
Z. Hatzopoulos ◽  
A. Christou
Keyword(s):  
Field Effect ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Field Effect Transistor ◽  
X Band ◽  
Potential Benefits ◽  
Effect Transistor ◽  
Metal Doped ◽  
Potential Stability ◽  
Grown Structure

ABSTRACTA doped channel heterojunction Field Effect Transistor (Metal-Doped Channel Field Effect Transistor, MEDFET) was fabricated using a molecular beam epitaxially (MBE) grown structure and excimer laser processed TiW-silicide ohmic contacts and TIW-Si gate metallization. The device was characterized at X-band frequencies in order to investigate the potential benefits of the semiconductor MBE structure and the potential stability of the laser processed TiW/Si electrode metallizations.

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