Effects of gas flow ratio on silicon carbide thin film growth mode and polytype formation during gas‐source molecular beam epitaxy

1994 ◽  
Vol 65 (22) ◽  
pp. 2851-2853 ◽  
Author(s):  
Satoru Tanaka ◽  
R. Scott Kern ◽  
Robert F. Davis
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Molecular Beam Epitaxy ◽  
Gas Flow ◽  
Molecular Beam ◽  
Film Growth ◽  
Thin Film Growth ◽  
Flow Ratio ◽  
Gas Source ◽  
Gas Flow Ratio

Thin film growth of (Cu, C)Ba2Ca(n−1)CunOy (n=1–4) superconductor by molecular beam epitaxy

2007 ◽  
Vol 301-302 ◽  
pp. 684-686 ◽  
Author(s):  
H. Shibata ◽  
S. Karimoto ◽  
A. Tsukada ◽  
T. Makimoto
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Thin Film Growth

Thin film growth of CaAgAs by molecular beam epitaxy

2020 ◽  
Vol 32 (43) ◽  
pp. 435703
Author(s):  
T Hatano ◽  
I Nakamura ◽  
S Ohta ◽  
Y Tomizawa ◽  
T Urata ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Thin Film Growth
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