Hydrogen Permeation Behavior of Zirconium Nitride Film on Zirconium Hydride

Hydrogen permeation barrier plays an important role in reducing hydrogen loss from zirconium hydride matrix when used as neutron moderator. Here, a composite nitride film was prepared on zirconium hydride by in situ reaction method in nitrogen atmosphere. The phase structure, morphology, element distribution, and valence states of the composite film were investigated by XRD, SEM, AES, and XPS analysis. It was found that the composite nitride film was continuous and dense with about 1.6 μm thickness; the major phase of the film was ZrN, with coexistence of ZrO2, ZrO, and ZrN0.36H0.8; and Zr-C, Zr-O, Zr-N, O-H, and N-H bonds were detected in the film. The existence of ZrN0.36H0.8 phase and the bonds of O-H and N-H revealed that the nitrogen and oxygen in the film could capture hydrogen from the zirconium hydride matrix. The hydrogen permeation performance of nitride film was compared with oxide film by permeation reduction factor (PRF), vacuum thermal dehydrogenation (VTD), and hydrogen permeation rate (HPR) methods, and the results showed that the hydrogen permeation barrier effects of nitride film were better than that of oxide film. The zirconium nitride film would be a potential candidate for hydrogen permeation barrier on the surface of zirconium hydride.

Режимы роста пленок нитрида алюминия на гибридных подложках SiC/Si(111)

The nucleation mechanism of aluminum nitride films grown by the method of hydride vapor phase epitaxy on hybrid substrates 3C-SiC/Si(111) is theoretically analyzed. The temperature regions and vapor pressure regions of components are determined in which the island growth mechanism and the layer-by-layer growth mechanism are realized. The theoretical conclusions are compared with the experimental data. The morphology of aluminum nitride film on 3C-SiC/Si(111) at the initial growth stage is investigated by the method of scanning electron microscopy. The methods of controlling the change of the growth mechanism from the island growth to the layer-by-layer growth are proposed.

Individual Microparticle Manipulation Using Combined Electroosmosis and Dielectrophoresis through a Si3N4 Film with a Single Micropore

Porous dielectric membranes that perform insulator-based dielectrophoresis or electroosmotic pumping are commonly used in microchip technologies. However, there are few fundamental studies on the electrokinetic flow patterns of single microparticles around a single micropore in a thin dielectric film. Such a study would provide fundamental insights into the electrokinetic phenomena around a micropore, with practical applications regarding the manipulation of single cells and microparticles by focused electric fields. We have fabricated a device around a silicon nitride film with a single micropore (2–4 µm in diameter) which has the ability to locally focus electric fields on the micropore. Single microscale polystyrene beads were used to study the electrokinetic flow patterns. A mathematical model was developed to support the experimental study and evaluate the electric field distribution, fluid motion, and bead trajectories. Good agreement was found between the mathematic model and the experimental data. We show that the combination of electroosmotic flow and dielectrophoretic force induced by direct current through a single micropore can be used to trap, agglomerate, and repel microparticles around a single micropore without an external pump. The scale of our system is practically relevant for the manipulation of single mammalian cells, and we anticipate that our single-micropore approach will be directly employable in applications ranging from fundamental single cell analyses to high-precision single cell electroporation or cell fusion.

Construction and Characterization of TiN/Si3N4 Composite Insulation Layer in TiN/Si3N4/Ni80Cr20 Thin Film Cutting Force Sensor

The measurement of cutting force is an effective method for machining condition monitoring in intelligent manufacturing. Titanium nitride films and silicon nitride films were prepared on 304 stainless steel substrates by DC-reactive magnetron sputtering and plasma-enhanced chemical vapor deposition (PECVD). The effects of substrate negative bias and nitrogen flow on the surface microstructures of TiN film were investigated. The smoothness of the film is optimal when the bias voltage is −60 V. X-ray diffraction (XRD) analysis was performed on the samples with the optimal smoothness, and it was found that when the nitrogen flow rate was higher than 2 sccm, the titanium nitride film had a mixed phase of TiN(111) and (200). It is further revealed that the change of peak intensity of TiN(200) can be enhanced by nitrogen flow. Through atomic force microscopy (AFM), it is found that the stronger the intensity of the TiN (200) peak, the smoother the surface of the film is. Finally, the effect of different film thicknesses on the hardness and toughness of the TiN/Si3N4 film system was studied by nanoindentation experiments. The nanohardness (H) of the TiN/Si3N4 film can reach 39.2 GPa, the elastic modulus (E) is 480.4 GPa, the optimal toughness value (H3/E2) is 0.261 GPa, and the sample has good insulation performance. Linear fitting of the film’s toughness to nanohardness shows that TiN/Si3N4 films with higher hardness usually have a higher H3/E2 ratio.

High-harmonic generation in metallic titanium nitride

High-harmonic generation is a cornerstone of nonlinear optics. It has been demonstrated in dielectrics, semiconductors, semi-metals, plasmas, and gases, but, until now, not in metals. Here we report high harmonics of 800-nm-wavelength light irradiating metallic titanium nitride film. Titanium nitride is a refractory metal known for its high melting temperature and large laser damage threshold. We show that it can withstand few-cycle light pulses with peak intensities as high as 13 TW/cm2, enabling high-harmonics generation up to photon energies of 11 eV. We measure the emitted vacuum ultraviolet radiation as a function of the crystal orientation with respect to the laser polarization and show that it is consistent with the anisotropic conduction band structure of titanium nitride. The generation of high harmonics from metals opens a link between solid and plasma harmonics. In addition, titanium nitride is a promising material for refractory plasmonic devices and could enable compact vacuum ultraviolet frequency combs.

Study on ignition performance of tantalum nitride film energy exchangers based on new bridge area

In order to reduce the ignition energy of the tantalum nitride film transducer, a new type of energy exchangers bridge area was designed in this paper, and it was fabricated by MEMS technology. The parameters of ignition voltage, ignition energy, as well as action time were tested. The experimental results showed that in terms of ignition voltage, ignition energy, and action time, the value of the energy exchangers element of the new bridge area was lower than the value of the energy exchangers element of the conventional bridge area. In addition, ignition performance can be reduced by many energy exchangers in the new bridge area.