Temperature dependence of the direct band gap energy and donor–acceptor transition energies in Be‐doped GaAsSb lattice matched to InP

1994 ◽  
Vol 65 (19) ◽  
pp. 2442-2444 ◽  
Author(s):  
K. G. Merkel ◽  
V. M. Bright ◽  
M. A. Marciniak ◽  
C. L. A. Cerny ◽  
M. O. Manasreh
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Transition Energies ◽  
Direct Band Gap ◽  
Gap Energy ◽  
Donor Acceptor ◽  
Direct Band ◽  
Lattice Matched

Tensile-strain effect of inducing the indirect-to-direct band-gap transition and reducing the band-gap energy of Ge

2015 ◽  
Vol 118 (10) ◽  
pp. 105704 ◽  
Author(s):  
Takeshi Inaoka ◽  
Takuro Furukawa ◽  
Ryo Toma ◽  
Susumu Yanagisawa
Keyword(s):  
Band Gap ◽  
Tensile Strain ◽  
Band Gap Energy ◽  
Strain Effect ◽  
Direct Band Gap ◽  
Gap Energy ◽  
Direct Band

scholarly journals Determination of the direct band-gap energy of InAlAs matched to InP by photoluminescence excitation spectroscopy

1997 ◽  
Vol 81 (10) ◽  
pp. 6916-6920 ◽  
Author(s):  
P. Roura ◽  
M. López-de Miguel ◽  
A. Cornet ◽  
J. R. Morante
Keyword(s):  
Band Gap ◽  
Band Gap Energy ◽  
Photoluminescence Excitation ◽  
Direct Band Gap ◽  
Gap Energy ◽  
Direct Band

Optical Properties of CuZn0.8Cd0.2SnS4 Quinternary Alloy Nanostructures

2015 ◽  
Author(s):  
A. S. Ibraheam ◽  
Y. Al-Douri ◽  
U. Hashim ◽  
Waleed K. Ahmed
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Spin Coating ◽  
Band Gap Energy ◽  
Direct Band Gap ◽  
Gap Energy ◽  
Coating Technique ◽  
Cu Content ◽  
Direct Band ◽  
Alloy Nanostructures

Cu2Zn0.8Cd0.2SnS4 quinternary alloy nanostructures were prepared with different copper (Cu) concentrations; 0.3, 0.5, 0.7 and 0.9 mol/L using the spin coating technique. The direct band gap energy of Cu2Zn0.8Cd0.2SnS4 quinternary alloy nanostructures is investigated to decrease as Cu increases. The transmittance value in the range 63–49% is depending on Cu content.

Hydrostatic-pressure coefficient of the direct band-gap energy ofAlxGa1−xAsforx=0−0.35

1996 ◽  
Vol 53 (16) ◽  
pp. 10916-10920 ◽  
Author(s):  
Hyeonsik M. Cheong ◽  
J. H. Burnett ◽  
W. Paul ◽  
P. F. Hopkins ◽  
K. Campman ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Band Gap ◽  
Pressure Coefficient ◽  
Band Gap Energy ◽  
Direct Band Gap ◽  
Gap Energy ◽  
Direct Band

Direct band-gap energy of semiconductors

1995 ◽  
Vol 36 (5) ◽  
pp. 831-835 ◽  
Author(s):  
B.R. Nag
Keyword(s):  
Band Gap ◽  
Band Gap Energy ◽  
Direct Band Gap ◽  
Gap Energy ◽  
Direct Band

A novel theoretical model for the temperature dependence of band gap energy in semiconductors

2017 ◽  
Vol 50 (40) ◽  
pp. 40LT02 ◽  
Author(s):  
Peiji Geng ◽  
Weiguo Li ◽  
Xianhe Zhang ◽  
Xuyao Zhang ◽  
Yong Deng ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Gap Energy

Temperature dependence of the direct band gap ofInxGa1−xAs (x=0.06 and 0.15)

1991 ◽  
Vol 44 (19) ◽  
pp. 10546-10550 ◽  
Author(s):  
Z. Hang ◽  
D. Yan ◽  
Fred H. Pollak ◽  
G. D. Pettit ◽  
J. M. Woodall
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Direct Band Gap ◽  
Direct Band

Photoluminescence Study on Temperature Dependence of Band Gap Energy of GaAsN Alloys

2001 ◽  
Vol 228 (1) ◽  
pp. 273-277 ◽  
Author(s):  
H. Yaguchi ◽  
S. Kikuchi ◽  
Y. Hijikata ◽  
S. Yoshida ◽  
D. Aoki ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Photoluminescence Study ◽  
Gap Energy
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