Temperature dependence of the photoluminescence properties and band gap energy of InxGa1−xAs/GaAs quantum wells

2000 ◽  
Vol 29 (12) ◽  
pp. 1362-1371 ◽  
Author(s):  
J.R Botha ◽  
A. W. R. Leitch
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Photoluminescence Properties ◽  
Gap Energy

A novel theoretical model for the temperature dependence of band gap energy in semiconductors

2017 ◽  
Vol 50 (40) ◽  
pp. 40LT02 ◽  
Author(s):  
Peiji Geng ◽  
Weiguo Li ◽  
Xianhe Zhang ◽  
Xuyao Zhang ◽  
Yong Deng ◽  
...  
Keyword(s):  
Theoretical Model ◽  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Gap Energy

Photoluminescence Study on Temperature Dependence of Band Gap Energy of GaAsN Alloys

2001 ◽  
Vol 228 (1) ◽  
pp. 273-277 ◽  
Author(s):  
H. Yaguchi ◽  
S. Kikuchi ◽  
Y. Hijikata ◽  
S. Yoshida ◽  
D. Aoki ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Photoluminescence Study ◽  
Gap Energy

scholarly journals A COMPARATIVE ANALYSIS OF EFFECT OF TEMPERATURE ON BAND-GAP ENERGY OF GALLIUM NITRIDE AND ITS STABILITY BEYOND ROOM TEMPERATURE USING BOSE–EINSTEIN MODEL AND VARSHNI’S MODEL

2017 ◽  
Vol 18 (2) ◽  
pp. 151-157 ◽  
Author(s):  
Md. Abdullah Al Humayun ◽  
AHM Zahirul Alam ◽  
Sheroz Khan ◽  
MohamedFareq AbdulMalek ◽  
Mohd Abdur Rashid
Keyword(s):  
Comparative Analysis ◽  
Temperature Dependence ◽  
Band Gap ◽  
Room Temperature ◽  
Band Gap Energy ◽  
Semiconductor Materials ◽  
Gap Energy ◽  
Einstein Model ◽  
S Model ◽  
Energy Dependent

High temperature stability of band-gap energy of active layer material of a semiconductor device is one of the major challenges in the field of semiconductor optoelectronic device design. It is essential to ensure the stability in different band-gap energy dependent characteristics of the semiconductor material used to fabricate these devices either directly or indirectly. Different models have been widely used to analyze the band-gap energy dependent characteristics at different temperatures. The most commonly used methods to analyze the temperature dependence of band-gap energy of semiconductor materials are: Passler model, Bose–Einstein model and Varshni’s model. This paper is going to report the limitation of the Bose–Einstein model through a comparative analysis between Bose–Einstein model and Varshni’s model. The numerical analysis is carried out considering GaN as it is one of the most widely used semiconductor materials all over the world. From the numerical results it is ascertained that below the temperature of 95o K both the models show almost same characteristics. However beyond 95o K Varshni’s model shows weaker temperature dependence than that of Bose–Einstein model. Varshni’s model shows that the band-gap energy of GaN at 300o K is found to be 3.43eV, which establishes a good agreement with the theoretically calculated band-gap energy of GaN for operating at room temperature.

Excitonic Photoluminescence from CuGaSe2Single Crystals and Epitaxial Layers: Temperature Dependence of the Band Gap Energy

2000 ◽  
Vol 39 (S1) ◽  
pp. 322 ◽  
Author(s):  
Andreas Bauknecht ◽  
Susanne Siebentritt ◽  
Jürgen Albert ◽  
Yvonne Tomm ◽  
Martha Christina Lux-Steiner
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Epitaxial Layers ◽  
Gap Energy

Temperature dependence of the band gap energy of crystalline CdTe

2000 ◽  
Vol 61 (4) ◽  
pp. 579-583 ◽  
Author(s):  
G. Fonthal ◽  
L. Tirado-Mejı́a ◽  
J.I. Marı́n-Hurtado ◽  
H. Ariza-Calderón ◽  
J.G. Mendoza-Alvarez
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Gap Energy

Temperature Dependence Of The Fundamental Band Gap In Hexagonal GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
H. Herr ◽  
V. Alex ◽  
J. Weber
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Line Shape ◽  
Free Exciton ◽  
Band Gap Energy ◽  
Recombination Process ◽  
Photoluminescence Spectra ◽  
High Quality ◽  
Fundamental Band ◽  
Gap Energy

AbstractPhotoluminescence spectra of hexagonal GaN were measured in the temperature range T= 2 – 1200 K. We identify the Free Exciton (FX) as the dominant recombination process in our high quality samples for temperatures above 200 K. From the line shape fit of the FX we determine the excitonic band gap shift with temperature. An analysis according to the empirical Varshni equation gives Eg (T)-Eg(0 K) = (-α T2)/(T + β), with α = (7.3 ± 0.3)·10−4 eV/K and β = (594 ± 54) K. We have detected significant differences in the band gap energy at low and higher temperatures for GaN layers grown on different substrate materials. Heating GaN above 1200 K leads to irreversible changes in the near band gap photoluminescence spectra.

Estimation of Effective Band Gap Energy of CdxZn1-xS/ZnS Multiple Quantum Wells Lattice-Matched to GaP Substrates

2004 ◽  
Vol 43 (6A) ◽  
pp. 3491-3492
Author(s):  
Chikara Onodera ◽  
Tadayoshi Shoji ◽  
Yukio Hiratate ◽  
Tsunemasa Taguchi
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Band Gap Energy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Gap Energy ◽  
Lattice Matched

Temperature dependence of the direct band gap energy and donor–acceptor transition energies in Be‐doped GaAsSb lattice matched to InP

1994 ◽  
Vol 65 (19) ◽  
pp. 2442-2444 ◽  
Author(s):  
K. G. Merkel ◽  
V. M. Bright ◽  
M. A. Marciniak ◽  
C. L. A. Cerny ◽  
M. O. Manasreh
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Transition Energies ◽  
Direct Band Gap ◽  
Gap Energy ◽  
Donor Acceptor ◽  
Direct Band ◽  
Lattice Matched

Photoresponse Studies of The Polarization Dependence of the CdGeAs2 Band Edge

1997 ◽  
Vol 484 ◽  
Author(s):  
G. J. Brown ◽  
M. C. Ohmer ◽  
P. G. Schunemann
Keyword(s):  
Electric Field ◽  
Temperature Dependence ◽  
Band Gap ◽  
Band Gap Energy ◽  
Field Direction ◽  
Band Edge ◽  
Optical Polarization ◽  
Gap Energy ◽  
Bias Electric Field ◽  
Electric Field Direction

AbstractMid-infrared photoresponse studies were performed on an oriented p-type cadmium germanium arsenide uniaxial crystal. The effects of optical polarization alignment, parallel and perpendicular to the c-axis of the crystal, were studied, as well as the effects of the transport electric-field direction. The measured optical band edge was 0.578 eV at 10 K for all polarization and bias configurations. This band gap energy is in good agreement with absorption and photoluminescence results for this sample. However, the photoresponse spectrum measured with unpolarized light at 10 K showed a much lower onset at 0.50 eV. This difference in the low temperature activation energy of the photoresponse is attributed to deep native defect levels near the band edge. These deep levels at times obscure the true band edge and can cause under estimates of the band gap energy. These results can explain the wide disparity in the reported CdGeAs2 band gap in the literature. In addition, the intensity of the photoresponse was found to be only slightly dependent on the optical polarization direction, but strongly dependent on the bias electric-field direction. The largest photoreponse was observed when the optical polarization was parallel to the c-axis and the bias electric field was perpendicular to the c-axis. The bias electric-field direction also had a significant effect upon the temperature dependence of the peak photoresponse intensity. The temperature dependence of the CdGeAs2 energy band gap was determined by empirical fitting.

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