Asymmetric high temperature superconducting Josephson vortex‐flow transistors with high current gain

1995 ◽  
Vol 67 (7) ◽  
pp. 1010-1012 ◽  
Author(s):  
R. Gerdemann ◽  
T. Bauch ◽  
O. M. Fröhlich ◽  
L. Alff ◽  
A. Beck ◽  
...  
Keyword(s):  
High Temperature ◽  
Vortex Flow ◽  
Current Gain ◽  
High Current ◽  
Josephson Vortex ◽  
High Temperature Superconducting

High current gain HTS Josephson vortex flow transistors

1999 ◽  
Vol 9 (2) ◽  
pp. 3941-3944 ◽  
Author(s):  
P.A.C. Tavares ◽  
E.J. Romans ◽  
C.M. Pegrum
Keyword(s):  
Vortex Flow ◽  
Current Gain ◽  
High Current ◽  
Josephson Vortex

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor

2019 ◽  
Vol 963 ◽  
pp. 832-836 ◽  
Author(s):  
Shuo Ben Hou ◽  
Per Erik Hellström ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Uv Light ◽  
Optical Power ◽  
Current Gain ◽  
High Current ◽  
Promising Candidate ◽  
Forward Current ◽  
On Chip

This paper presents our in-house fabricated 4H-SiC n-p-n phototransistors. The wafer mapping of the phototransistor on two wafers shows a mean maximum forward current gain (βFmax) of 100 at 25 °C. The phototransistor with the highest βFmax of 113 has been characterized from room temperature to 500 °C. βFmax drops to 51 at 400 °C and remains the same at 500 °C. The photocurrent gain of the phototransistor is 3.9 at 25 °C and increases to 14 at 500 °C under the 365 nm UV light with the optical power of 0.31 mW. The processing of the phototransistor is same to our 4H-SiC-based bipolar integrated circuits, so it is a promising candidate for 4H-SiC opto-electronics on-chip integration.

High temperature superconducting vortex flow transistor

1992 ◽  
Vol 28 (8) ◽  
pp. 781 ◽  
Author(s):  
J.S. Satchell ◽  
J.A. Edwards ◽  
N.G. Chew ◽  
R.G. Humphreys
Keyword(s):  
High Temperature ◽  
Vortex Flow ◽  
High Temperature Superconducting

Progress in Nanoengineered Microstructures for Tunable High-Current, High-Temperature Superconducting Wires

2008 ◽  
Vol 20 (3) ◽  
pp. 391-407 ◽  
Author(s):  
T. G. Holesinger ◽  
L. Civale ◽  
B. Maiorov ◽  
D. M. Feldmann ◽  
J. Y. Coulter ◽  
...  
Keyword(s):  
High Temperature ◽  
High Current ◽  
Superconducting Wires ◽  
High Temperature Superconducting

The Models of Superconducting Power Facilities: The Effect of Different Tape

2014 ◽  
Vol 960-961 ◽  
pp. 742-745
Author(s):  
Meng Song ◽  
Lu Shun Su ◽  
Xu Zhi Deng ◽  
Li Ren ◽  
Shi Feng Shen ◽  
...  
Keyword(s):  
High Temperature ◽  
Current Density ◽  
Power Transmission ◽  
High Current Density ◽  
High Current ◽  
Electromagnetic Design ◽  
Superconducting Tape ◽  
High Temperature Superconducting

Due to the high current density in 77K, the high temperature superconducting facilities are expected to improve the efficient in power transmission. Superconducting facilities electromagnetic design is highly dependent on the characteristic of the superconducting tape. As a result, the comparison of the effect of different tape in electromagnetic design should be studied. In this paper, several facilities model are used as example to analyze the effect of different tape utilization. The result shows in different application conditions, or, specific benefits are considered, there is a specific tape will be the best choice.

Physics and performance of high temperature superconducting vortex flow transistors

1995 ◽  
Vol 3 (7-10) ◽  
pp. 443-462 ◽  
Author(s):  
R. Gross ◽  
R. Gerdemann ◽  
L. Alff ◽  
T. Bauch ◽  
A. Beck ◽  
...  
Keyword(s):  
High Temperature ◽  
Vortex Flow ◽  
High Temperature Superconducting ◽  
And Performance
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