Photoluminescence study of ZnSe single crystals grown by solid‐phase recrystallization

1996 ◽  
Vol 68 (10) ◽  
pp. 1356-1358 ◽  
Author(s):  
E. Tournié ◽  
C. Morhain ◽  
G. Neu ◽  
J.‐P. Faurie ◽  
R. Triboulet ◽  
...  
1996 ◽  
Vol 80 (5) ◽  
pp. 2983-2989 ◽  
Author(s):  
E. Tournié ◽  
C. Morhain ◽  
G. Neu ◽  
M. Laügt ◽  
C. Ongaretto ◽  
...  

2001 ◽  
Vol 16 (5) ◽  
pp. 1245-1248 ◽  
Author(s):  
J. A. Garcia ◽  
V. Muñoz ◽  
C. Martinez-Tomas ◽  
J. J. S. Garitaonandia

A close relationship between the photoluminescence emissions labeled Y and S, related to dislocations and extended structural defects, and the preparation of the surface state of ZnSe single crystals before PL (photoluminescence) measurements has been established. The samples were obtained by solid-phase recrystallization under different pressure conditions. An easy method for achieving good quality surfaces with a very significant reduction of such Y and S PL emissions is proposed.


2017 ◽  
Vol 457 ◽  
pp. 275-281 ◽  
Author(s):  
Eugeni Gavrishuk ◽  
Vladimir Ikonnikov ◽  
Tatyana Kotereva ◽  
Vladimir Pimenov ◽  
Dmitry Savin ◽  
...  

1997 ◽  
Vol 182 (3-4) ◽  
pp. 329-336 ◽  
Author(s):  
Hiroshi Okada ◽  
Seiichiro Ohmoto ◽  
Takao Kawanaka ◽  
Tsunemasa Taguchi

1995 ◽  
Vol 30 (1) ◽  
pp. L1-L4
Author(s):  
Dai-qing Li ◽  
Ting-qi Ren ◽  
Bao-an Gong ◽  
Bei Zhang ◽  
Kong-jun Chen ◽  
...  

2019 ◽  
Author(s):  
P.Acosta Alba ◽  
J. Aubin ◽  
F. Mazzamuto ◽  
S. Perrot ◽  
S. Kerdiles

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