Rutherford backscattering studies of solid phase recrystallization and incorporation in erbium-implanted silicon

1995 ◽  
Vol 30 (1) ◽  
pp. L1-L4
Author(s):  
Dai-qing Li ◽  
Ting-qi Ren ◽  
Bao-an Gong ◽  
Bei Zhang ◽  
Kong-jun Chen ◽  
...  
Keyword(s):  
Solid Phase ◽  
Rutherford Backscattering ◽  
Phase Recrystallization

Solid phase recrystallization induced by nanosecond pulsed laser

2019 ◽  
Author(s):  
P.Acosta Alba ◽  
J. Aubin ◽  
F. Mazzamuto ◽  
S. Perrot ◽  
S. Kerdiles
Keyword(s):  
Solid Phase ◽  
Pulsed Laser ◽  
Phase Recrystallization ◽  
Nanosecond Pulsed Laser

Growth by solid phase recrystallization and assessment of large ZnSe crystals of high purity and structural perfection

1996 ◽  
Vol 159 (1-4) ◽  
pp. 156-160 ◽  
Author(s):  
R. Triboulet ◽  
J.O. Ndap ◽  
A. Tromson-Carli ◽  
P. Lemasson ◽  
C. Morhain ◽  
...  
Keyword(s):  
High Purity ◽  
Solid Phase ◽  
Structural Perfection ◽  
Phase Recrystallization

Structural and optical characterization of ZnSe single crystals grown by solid‐phase recrystallization

1996 ◽  
Vol 80 (5) ◽  
pp. 2983-2989 ◽  
Author(s):  
E. Tournié ◽  
C. Morhain ◽  
G. Neu ◽  
M. Laügt ◽  
C. Ongaretto ◽  
...  
Keyword(s):  
Single Crystals ◽  
Solid Phase ◽  
Optical Characterization ◽  
Phase Recrystallization

Deep center luminescence versus surface preparation of ZnSe single crystals

2001 ◽  
Vol 16 (5) ◽  
pp. 1245-1248 ◽  
Author(s):  
J. A. Garcia ◽  
V. Muñoz ◽  
C. Martinez-Tomas ◽  
J. J. S. Garitaonandia
Keyword(s):  
Single Crystals ◽  
Surface State ◽  
Solid Phase ◽  
Surface Preparation ◽  
Deep Center ◽  
Structural Defects ◽  
Easy Method ◽  
Phase Recrystallization ◽  
Close Relationship

A close relationship between the photoluminescence emissions labeled Y and S, related to dislocations and extended structural defects, and the preparation of the surface state of ZnSe single crystals before PL (photoluminescence) measurements has been established. The samples were obtained by solid-phase recrystallization under different pressure conditions. An easy method for achieving good quality surfaces with a very significant reduction of such Y and S PL emissions is proposed.

scholarly journals Solid Phase Recrystallization in Arsenic Ion-Implanted Silicon-On-Insulator by Microsecond UV Laser Annealing

2021 ◽  
pp. 1-1
Author(s):  
Toshiyuki Tabata ◽  
Fabien Roze ◽  
Pablo Acosta Alba ◽  
Sebastien Halty ◽  
Pierre-Edouard Raynal ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Solid Phase ◽  
Silicon On Insulator ◽  
Uv Laser ◽  
Phase Recrystallization ◽  
Ion Implanted

Improvement of Crystalline Quality of Si Films on CaF2/Si Structures by Ion Implantation and Solid Phase Recrystallization

1983 ◽  
Vol 22 (Part 2, No. 2) ◽  
pp. L118-L120 ◽  
Author(s):  
Tanemasa Asano ◽  
Hiroshi Ishiwara ◽  
Kouzo Orihara ◽  
Seijiro Furukawa
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Crystalline Quality ◽  
Phase Recrystallization ◽  
Si Films

Lateral Solid Phase Recrystallization from the Crystal Seed in Ge-Ion-Implanted Amorphous Silicon Films by Repetition Rapid Thermal Annealing

2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2150-2154 ◽  
Author(s):  
Jin-Wook Seo ◽  
Yoshitaka Kokubo ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Phase Recrystallization ◽  
Crystal Seed ◽  
Ion Implanted
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