Effect of thermal annealing on optical emission properties of low‐temperature grown AlGaAs/GaAs multiple quantum wells

1996 ◽  
Vol 69 (23) ◽  
pp. 3513-3515 ◽  
Author(s):  
W. Feng ◽  
F. Chen ◽  
W. X. Wang ◽  
W. Q. Cheng ◽  
Y. Yu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Optical Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Emission Properties

Emission properties and thermal annealing of InGaN/GaN multiple quantum wells with different protection layers

2004 ◽  
Vol 241 (12) ◽  
pp. 2816-2819 ◽  
Author(s):  
H. K. Cho ◽  
T. E. Park ◽  
D. C. Kim ◽  
J. E. Shin ◽  
J. S. Lee
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Emission Properties

Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

2013 ◽  
Vol 22 (7) ◽  
pp. 076803 ◽  
Author(s):  
Wen-Yu Cao ◽  
Yong-Fa He ◽  
Zhao Chen ◽  
Wei Yang ◽  
Wei-Min Du ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diode ◽  
Diode Structure ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Emission Properties

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum

Effects of the material polarity on the green emission properties of InGaN∕GaN multiple quantum wells

2006 ◽  
Vol 89 (15) ◽  
pp. 151906 ◽  
Author(s):  
Yen-Lin Lai ◽  
Chuan-Pu Liu ◽  
Yung-Hsiang Lin ◽  
Ray-Ming Lin ◽  
Dong-Yuan Lyu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Green Emission ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Emission Properties
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