Si/SiO2 interface roughness: Comparison between surface second harmonic generation and x-ray scattering

1997 ◽  
Vol 70 (11) ◽  
pp. 1414-1416 ◽  
Author(s):  
S. T. Cundiff ◽  
W. H. Knox ◽  
F. H. Baumann ◽  
K. W. Evans-Lutterodt ◽  
M.-T. Tang ◽  
...  
Keyword(s):  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
Interface Roughness ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Spontaneous and field-induced mesomorphism of a silyl-terminated bent-core liquid crystal as determined from second-harmonic generation and resonant X-ray scattering

Soft Matter ◽  
2014 ◽  
Vol 10 (1) ◽  
pp. 196-205 ◽  
Author(s):  
C. L. Folcia ◽  
J. Ortega ◽  
J. Etxebarria ◽  
S. Rodríguez-Conde ◽  
G. Sanz-Enguita ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

scholarly journals Table-top extreme ultraviolet second harmonic generation

2021 ◽  
Vol 7 (21) ◽  
pp. eabe2265
Author(s):  
Tobias Helk ◽  
Emma Berger ◽  
Sasawat Jamnuch ◽  
Lars Hoffmann ◽  
Adeline Kabacinski ◽  
...  
Keyword(s):  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
First Principles ◽  
Extreme Ultraviolet ◽  
Second Harmonic ◽  
High Harmonic ◽  
Electronic Structure Calculations ◽  
Free Electron Lasers ◽  
X Ray ◽  
Structure Calculations

The lack of available table-top extreme ultraviolet (XUV) sources with high enough fluxes and coherence properties has limited the availability of nonlinear XUV and x-ray spectroscopies to free-electron lasers (FELs). Here, we demonstrate second harmonic generation (SHG) on a table-top XUV source by observing SHG near the Ti M2,3 edge with a high-harmonic seeded soft x-ray laser. Furthermore, this experiment represents the first SHG experiment in the XUV. First-principles electronic structure calculations suggest the surface specificity and separate the observed signal into its resonant and nonresonant contributions. The realization of XUV-SHG on a table-top source opens up more accessible opportunities for the study of element-specific dynamics in multicomponent systems where surface, interfacial, and bulk-phase asymmetries play a driving role.

Numerical study of the second harmonic generation in FELs

2021 ◽  
Vol 28 (3) ◽  
Author(s):  
A. M. Kalitenko
Keyword(s):  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Free Electron ◽  
Numerical Study ◽  
Second Harmonic ◽  
Three Dimensional ◽  
X Ray ◽  
Linac Coherent Light Source ◽  
The Individual ◽  
Analytical Expressions

A numerical study of the effect of betatron oscillations on the second harmonic generation in free-electron lasers (FELs) is presented. Analytical expressions for the effective coupling strength factors are derived that clearly distinguish all contributions in subharmonics and each polarization of the radiation. A three-dimensional time-dependent numerical FEL code that takes into account the main FEL effects and the individual contribution of each electron to the second harmonic generation is presented. Also, the X- and Y-polarizations of the second harmonic are analyzed. The second harmonic was detected in experiments at the Advanced Photon Source (APS) Low Energy Undulator Test Line (LEUTL) and Linac Coherent Light Source (LCLS) in the soft X-ray regime. The approach presented in the article can be useful for a comprehensive study and diagnostics of XFELs. In the paper, the LCLS and Pohang Accelerator Laboratory X-ray Free-Electron Laser (PAL-XFEL) experiments are modeled. The simulation results are in a good agreement with the experimental data.

X-ray production and second-harmonic generation during femtosecond laser microdrilling

2015 ◽  
Vol 120 (2) ◽  
pp. 409-415 ◽  
Author(s):  
V. M. Gordienko ◽  
I. A. Zhvaniya ◽  
I. A. Makarov
Keyword(s):  
Femtosecond Laser ◽  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Second Harmonic ◽  
X Ray

Interface roughness of InAs/AlSb superlattices investigated by x‐ray scattering

1996 ◽  
Vol 79 (1) ◽  
pp. 120-124 ◽  
Author(s):  
B. Jenichen ◽  
S. A. Stepanov ◽  
B. Brar ◽  
H. Kroemer
Keyword(s):  
Interface Roughness ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Atomic Level Investigations of W-Si Multilayers by High Resolution Tem and X Ray Scattering

1987 ◽  
Vol 103 ◽  
Author(s):  
S. R Nutt ◽  
J. E. Keem
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Interface Roughness ◽  
Bilayer Thickness ◽  
Individual Layer ◽  
X Ray ◽  
X Ray Scattering ◽  
Resolution Electron ◽  
Ray Scattering

ABSTRACTWe have prepared multilayer films of W-Si with bilayer repeat spacing from approximately 1.5 nm to 9 nm and performed high resolution electron microscopy and low angle x-ray scattering on them. Average composition estimates as inferred from deposition conditions, x ray scattering and electron microscopy are compared. Determinations of the individual layer thickness ratios by electron microscopy and x ray scattering vary significantly from expectations as the bilayer thickness approaches 1.5 nm. Layer intermixing to increase as the bilayer thickness decreases. Composition profiles as inferred from the Cuk x ray profile are compared to those inferred from the high resolution electron micrographs. Visual observations from melectron microscopy are presented indicating that the interface roughness is rapidly damped in the W-Si multilayer system. Estimates of the layer uniformity are made from the high resolution images.

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