High stability amorphous-silicon–nitride thin-film diode ring switch

1998 ◽  
Vol 72 (1) ◽  
pp. 91-93 ◽  
Author(s):  
M. T. Johnson ◽  
G. Oversluizen ◽  
A. A. van der Put ◽  
W. H. M. Lodders
1996 ◽  
Vol 424 ◽  
Author(s):  
Tong Li ◽  
Chun-Ying Chen ◽  
Charles T. Malone ◽  
Jerzy Kanicki

AbstractHydrogenated amorphous silicon nitride thin films, prepared in a large area plasma-enhanced chemical vapor (PECVD) deposition system utilizing high-rate deposition technique, have been characterized by various techniques. Experimental data obtained from this study are presented and compared to low-rate deposited PECVD films. Special attention has been devoted during this study to the difference between high- and low-rate deposited samples. The amorphous silicon (a-Si:H) thin-film transistors (TFTs) based on high-rate PECVD materials have been fabricated and characterized. The evaluation of a-Si:H TFTs indicates a good electrical performance which is comparable to its low-rate PECVD materials counterparts.


1996 ◽  
Vol 79 (2) ◽  
pp. 842 ◽  
Author(s):  
K. J. B. M. Nieuwesteeg ◽  
A. A. van der Put ◽  
M. T. Johnson ◽  
C. G. C. de Kort

2001 ◽  
Vol 89 (10) ◽  
pp. 5491-5496 ◽  
Author(s):  
G. Oversluizen ◽  
V. Zieren ◽  
M. T. Johnson ◽  
A. A. van der Put ◽  
W. H. M. Lodders

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