Experimental evidence of photoinduced expansion in hydrogenated amorphous silicon using bending detected optical lever method

1998 ◽  
Vol 72 (23) ◽  
pp. 2978-2980 ◽  
Author(s):  
T. Gotoh ◽  
S. Nonomura ◽  
M. Nishio ◽  
S. Nitta ◽  
M. Kondo ◽  
...  
Keyword(s):  
Experimental Evidence ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Optical Lever ◽  
Hydrogenated Amorphous

Enhanced Hydrogen Diffusion Under Illumination in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
P.V. Santos ◽  
N.M. Johnson ◽  
R.A. Street
Keyword(s):  
Diffusion Coefficient ◽  
Electric Field ◽  
Experimental Evidence ◽  
Amorphous Silicon ◽  
Hydrogen Diffusion ◽  
Hydrogenated Amorphous Silicon ◽  
Diffusion Region ◽  
Hydrogen Diffusion Coefficient ◽  
Hydrogenated Amorphous ◽  
Carrier Population

ABSTRACTWe provide experimental evidence for the fact that hydrogen diffusion in hydroge-nated amorphous silicon is controlled by the concentration of electronic carriers. It is experimentally demonstrated that the hydrogen diffusion coefficient (a) is enhanced if the carrier population is increased by illumination and (b) is strongly suppressed if carriers are extracted from the diffusion region by the application of an electric field.

The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin

2010 ◽  
Vol 1245 ◽  
Author(s):  
Arno H.M. Smets ◽  
Chris R. Wronski ◽  
Miro Zeman ◽  
M. van de Sanden
Keyword(s):  
Experimental Evidence ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Defect States ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous ◽  
Metastable Defect ◽  
Hydrogen Bonded

AbstractIn the recent years more and more theoretical and experimental evidence have been found that the hydrogen bonded to silicon in dense hydrogenated amorphous silicon (a-Si:H) predominantly resides in hydrogenated divacancies. In this contribution we will philosophize about the option that the small fraction of divacancies, missing at least one of its bonded hydrogen, may correspond to some of the native and metastable defect states of a-Si:H. We will discuss that such defect entities are an interesting basis for new and alternative views on the origin of the SWE.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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