Enhanced Hydrogen Diffusion Under Illumination in Hydrogenated Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
P.V. Santos ◽  
N.M. Johnson ◽  
R.A. Street
Keyword(s):  
Diffusion Coefficient ◽  
Electric Field ◽  
Experimental Evidence ◽  
Amorphous Silicon ◽  
Hydrogen Diffusion ◽  
Hydrogenated Amorphous Silicon ◽  
Diffusion Region ◽  
Hydrogen Diffusion Coefficient ◽  
Hydrogenated Amorphous ◽  
Carrier Population

ABSTRACTWe provide experimental evidence for the fact that hydrogen diffusion in hydroge-nated amorphous silicon is controlled by the concentration of electronic carriers. It is experimentally demonstrated that the hydrogen diffusion coefficient (a) is enhanced if the carrier population is increased by illumination and (b) is strongly suppressed if carriers are extracted from the diffusion region by the application of an electric field.

Diffusion coefficient using pausing time of hydrogen in a-Si:H with exponential energy distribution

2015 ◽  
Vol 29 (14) ◽  
pp. 1550083 ◽  
Author(s):  
Harumi Hikita ◽  
Kazuo Morigaki
Keyword(s):  
Distribution Function ◽  
Diffusion Coefficient ◽  
Brownian Motion ◽  
Energy Distribution ◽  
Amorphous Silicon ◽  
Hydrogen Diffusion ◽  
Hydrogenated Amorphous Silicon ◽  
Diffusion Time ◽  
Energy Distribution Function ◽  
Hydrogenated Amorphous

The diffusion coefficient of hydrogen is obtained for exponential energy distribution in hydrogenated amorphous silicon (a-Si:H). It is shown that the diffusion coefficient follows the form of τα-1 (τ: diffusion time) in the case of α < 1 and a larger τ, in which α is the ratio of hydrogen temperature to width for energy distribution function. In the case of α ≥ 1, as α reaches infinity at the limit, the hydrogen diffusion approaches Brownian motion.

Reduction of the Defect Density in a-Si:H Deposited at ≤250°C

1993 ◽  
Vol 297 ◽  
Author(s):  
Hitoshi Nishio ◽  
Gautam Ganguly ◽  
Akihisa Matsuda
Keyword(s):  
Diffusion Coefficient ◽  
Amorphous Silicon ◽  
Surface Diffusion ◽  
Film Growth ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Device Fabrication ◽  
Surface Diffusion Coefficient ◽  
Hydrogenated Amorphous ◽  
Substrate Temperatures

We present a method to reduce the defect density in hydrogenated amorphous silicon (a-Si:H) deposited at low substrate temperatures similar to those used for device fabrication . Film-growth precursors are energized by a heated mesh to enhance their surface diffusion coefficient and this enables them to saturate more surface dangling bonds.

Role of Hydrogen Microstructure in Amorphous Silicon

1992 ◽  
Vol 258 ◽  
Author(s):  
Sufi Zafar ◽  
E. A. Schiff
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Evolution ◽  
Hydrogen Diffusion ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous ◽  
Unified Description

ABSTRACTA model for correlating the observed properties of hydrogenated amorphous silicon (a-Si:H) with the underlying hydrogen microstructure is reviewed. The model provides a unified description of defect equilibration, hydrogen evolution, rehydrogenation and hydrogen diffusion measurements.

Separation of Nucleation and Growth Processes of Nanocrystalline Silicon by Hydrogen Radical Treatment of Hydrogenated Amorphous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Masanori Otobe ◽  
Shunri Oda
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Diffusion ◽  
Hydrogenated Amorphous Silicon ◽  
Nanocrystalline Silicon ◽  
Nucleation And Growth ◽  
Growth Processes ◽  
Plan View ◽  
Hydrogen Radical ◽  
Hydrogen Radicals ◽  
Hydrogenated Amorphous

ABSTRACTWe have investigated nucleation and growth mechanism of nanocrystalline silicon (nc-Si) based on the experimental observation of plan-view transmission electron microscopy. Nanocrystalline Si has been prepared by hydrogen radical annealing of hydrogenated amorphous silicon (a-Si:H) layer, which is deposited on hydrogen radical treated a-Si:H buffer layer. Nanocrystallization depends critically upon hydrogen radical annealing time and the thickness ofa-Si:H layer. Hydrogen radicals play important roles in both nucleation and growth processes in a different way. Growth of nc-Si can be explained by “hydrogen diffusion model”, in which hydrogen radicals diffusing through a-Si:H layer to interface cause nanocrystallization. Our results imply that nuclei for nc-Si are generated at the interface between a-Si:H and under layer when treated by hydrogen radicals.

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